Dielectric charging induced drift in micro device reliability-a review

Second order sigma-delta control of charge trapping for MOS capacitors

“… Electrostatic MEMS/NEMS [5][6][7]. Charge trapping generates shift of the C-V characteristic of the device, shift of the pull-in voltage and even permanent stiction.…”

Space Charge at Nanoscale: Probing Injection and Dynamic Phenomena Under Dark/Light Configurations by Using KPFM and C-AFM

“…Another important issue for the reliability of MEMS is tribological effect particularly appearing on the contacts [6]. For probing devices with such outcomes, appropriate techniques and methodologies are needed to provide information on charges and forces at the relevant scale [7][8][9].…”

Characterization and reliability studies towards piezoelectrically actuated RF-MEMS switches

“…Charging can be detected by capacitancevoltage measurements [81,82]. Kelvin probe force microscopy technique based on atomic force microscopy (AFM) with a conductive tip is able to draw a surface map of the charge [22,81].…”

“…Charging can be detected by capacitancevoltage measurements [81,82]. Kelvin probe force microscopy technique based on atomic force microscopy (AFM) with a conductive tip is able to draw a surface map of the charge [22,81]. Thermally stimulated discharge/depolarization current experiments firstly induces dielectric charging, then monitors the discharge current while the temperature of the dielectric is ramped up [22].…”

“…In QS C-V, V AC is not determined, and consecutive measurements lead to values randomly differing up to 0.2 V. Hence V pi (18.5 V to 18.7 V) from the QS C-V curve is not shown in this graph. The shift of pull-in voltage in publications is measured at a constant AC voltage and is usually considered a degradation of the switch, which mainly relates to the charging [81], and sometimes relates to thermal expansion [124].…”