In this paper, results about tuning of electrical properties of a-SION:H thin film is presented. Issues related to structural and electrical characterization of these layers is investigated. Ellipsometry is used to determine accurately layer thickness and Kelvin Force Microscopy (KFM) permits to characterize local electrical properties. Results emphasize that tuning layer process parameter permit to modify surface and volume conduction. More particularly, increasing of Si-environment increases volume conduction and charges retention. So, local electrical properties of dielectric film can be engineered with this process

Charge injection and retention in thin dielectric layers remain critical issues for the reliability of many electronic devices because of their association with a large number of failure mechanisms. To overcome this drawback, a deep understanding of the mechanisms leading to charge injection close to the injection area is needed. Even though the charge injection is extensively studied and reported in the literature to characterize the charge storage capability of dielectric materials, questions about charge injection mechanisms when using atomic force microscopy (AFM) remain open. In this paper, a thorough study of charge injection by using AFM in thin plasma-processed amorphous silicon oxynitride layers with properties close to that of thermal silica layers is presented. The study considers the impact of applied voltage polarity, work function of the AFM tip coating and tip curvature radius. A simple theoretical model was developed and used to analyze the obtained experimental results. The electric field distribution is computed as a function of tip geometry. The obtained experimental results highlight that after injection in the dielectric layer the charge lateral spreading is mainly controlled by the radial electric field component independently of the carrier polarity. The injected charge density is influenced by the nature of electrode metal coating (work function) and its geometry (tip curvature radius). The electron injection is mainly ruled by the Schottky injection barrier through the field electron emission mechanism enhanced by thermionic electron emission. The hole injection mechanism seems to differ from the electron one depending on the work function of the metal coating. Based on the performed analysis, it is suggested that for hole injection by AFM, pinning of the metal Fermi level with the metal-induced gap states in the studied silicon oxynitride layers starts playing a role in the injection mechanisms.

1 -New concept concerning dielectric engineering is presented in this work aiming at a net improvement of the performance of dielectric layers in RF MEMS capacitive switches with electrostatic actuation and an increase of their reliability. Instead of synthesis of new dielectric materials we have developed a new class of dielectric layers that gain their performance from design rather than from composition. Two kinds of nanostructured dielectrics are presented. They consist of: (i) silicon oxynitride layers (SiO x N y :H) with gradual variation of their properties (discrete or continuous), and (ii) organosilicon (SiO x C y :H) and/or silica (SiO 2 ) layers with tailored interfaces; a single layer of silver nanoparticles (AgNPs) is embedded in the vicinity of the dielectric free surface. The nanostructured dielectric layers were deposited in a plasma process. They were structurally characterized and tested under electrical stress and environmental conditions typical for RF MEMS operation. The charge injection and decay dynamics were probed by Kelvin Force Microscopy (KFM). Modulation of the conductive properties of the nanostructured layers over 7 orders of magnitude is achieved. Compared to dielectric mono-layers, the nanostructured ones exhibit much shorter charge retention times. They appear to be promising candidates for implementation in RF MEMS capacitive switches with electrostatic actuation, and more generally for applications where surface charging must be avoided.

To understand the physical phenomena occurring at metal/dielectric interfaces, determination of the charge density profile at nanoscale is crucial. To deal with this issue, charges were injected applying a DC voltage on lateral Al-electrodes embedded in a SiN thin dielectric layer. The surface potential induced by the injected charges was probed by Kelvin probe force microscopy (KPFM). It was found that the KPFM frequency mode is a better adapted method to probe accurately the charge profile. To extract the charge density profile from the surface potential two numerical approaches based on the solution to Poisson's equation for electrostatics were investigated: the second derivative model method, already reported in the literature, and a new 2D method based on the finite element method (FEM). Results highlight that the FEM is more robust to noise or artifacts in the case of a non-flat initial surface potential. Moreover, according to theoretical study the FEM appears to be a good candidate for determining charge density in dielectric films with thicknesses in the range from 10 nm to 10 μm. By applying this method, the charge density profile was determined at nanoscale, highlighting that the charge cloud remains close to the interface.

Protein adsorption on solid surfaces is of interest for many industrial and biomedical applications, where it represents the conditioning step for micro-organism adhesion and biofilm formation. To understand the driving forces of such an interaction we focus in this paper on the investigation of the adsorption of bovine serum albumin (BSA) (optically non-absorbing, model protein) and DsRed (optically absorbing, naturally fluorescent protein) on silica surfaces. Specifically, we propose synthesis of thin protein layers by means of dip coating of the dielectric surface in protein solutions with different concentrations (0.01-5.0 g l). We employed spectroscopic ellipsometry as the most suitable and non-destructive technique for evaluation of the protein layers' thickness and optical properties (refractive index and extinction coefficient) after dehydration, using two different optical models, Cauchy for BSA and Lorentz for DsRed. We demonstrate that the thickness, the optical properties and the wettability of the thin protein layers can be finely controlled by proper tuning of the protein concentration in the solution. These results are correlated with the thin layer morphology, investigated by AFM, FTIR and PL analyses. It is shown that the proteins do not undergo denaturation after dehydration on the silica surface. The proteins arrange themselves in a lace-like network for BSA and in a rod-like structure for DsRed to form mono- and multi-layers, due to different mechanisms driving the organization stage.

The study of charge distribution on the surface and in the bulk of dielectrics is of great scientific interest because of the information gained on the storage and transport properties of the medium. Nevertheless, the processes at the nanoscale level remain out of the scope of the commonly used diagnostic methods. Atomic force microscopy (AFM) is currently applied for both injection and imaging of charges on dielectric thin films at the nanoscale level to answer the increasing demand for characterization of miniaturized components used in microelectronics, telecommunications, electrophotography, electrets, etc. However, the mechanisms for dielectric charging by AFM are not well documented, and an analysis of the literature shows that inappropriate mechanisms are sometimes presented. It is shown here that corona discharge, frequently pointed out as a likely mechanism for dielectric charging by AFM in tip-to-sample space mode, cannot develop in such small distances. Furthermore, a review of different mechanisms surmised to be at the origin of dielectric charging at the nanoscale level is offered. Field electron emission enhanced by thermionic emission is identified as a likely mechanism for dielectric charging at the nanoscale level. Experimental validation of this mechanism is obtained for typical electric field strengths in AFM.

Articles you may be interested inNumerical simulations of electrostatic interactions between an atomic force microscopy tip and a dielectric sample in presence of buried nano-particles Electric Force-Distance Curves (EFDC) is one of the ways whereby electrical charges trapped at the surface of dielectric materials can be probed. To reach a quantitative analysis of stored charge quantities, measurements using an Atomic Force Microscope (AFM) must go with an appropriate simulation of electrostatic forces at play in the method. This is the objective of this work, where simulation results for the electrostatic force between an AFM sensor and the dielectric surface are presented for different bias voltages on the tip. The aim is to analyse force-distance curves modification induced by electrostatic charges. The sensor is composed by a cantilever supporting a pyramidal tip terminated by a spherical apex. The contribution to force from cantilever is neglected here. A model of force curve has been developed using the Finite Volume Method. The scheme is based on the Polynomial Reconstruction Operator-PRO-scheme. First results of the computation of electrostatic force for different tip-sample distances (from 0 to 600 nm) and for different DC voltages applied to the tip (6 to 20 V) are shown and compared with experimental data in order to validate our approach. V C 2014 AIP Publishing LLC. [http://dx.

The understanding of charge injection mechanism at metal/dielectric interface is crucial in many applications. A direct probe of such phenomenon requires a charge measurement method whose spatial resolution is compatible with the characteristic scale of phenomena occurring after injection, like charge trapping, and with the geometry of samples under investigation. In this paper, charge injection at metal/dielectric interface and their motion in silicon nitride layer under tunable electric field are probed at nanoscale using a technique derived from Atomic Force Microscopy. This was achieved by realizing embedded lateral electrode structures and using surface potential measurement by Kelvin Probe Force Microscopy (KPFM) to provide voltage, field and charge profiles close to the metal/dielectric interface during and after biasing the electrodes. The influence of electric field enhancement at the interface due to the electrode geometry was accounted for. Electron and hole mobility was estimated from surface potential profiles obtained under polarization. Charge dynamic was investigated during depolarization steps.