Dielectric characteristics of fluorinated ultradry SiO2

Abstract

Improvement of dielectric breakdown characteristics and hot-electron-induced interface degradation of metal-oxide-semiconductor capacitors having fluorinated ultradry oxides has been demonstrated. The fluorine is introduced through HF surface treatment of Si prior to oxidation. Secondary-ion mass spectrometry data indicate that SiF distribution is peaked both at the surface of the oxide and at the SiO2/Si interface in the fluorinated ultradry oxide. The possible role of fluorine on the improvement of the dielectric characteristics will be discussed.

Plasma Enabled Conformal and Damage Free Encapsulation of Fragile Molecular Matter: from Surface‐Supported to On‐Device Nanostructures

“…The results indicate that the breakdown fields are in the range 4.5–7.3 MV cm −1 . These values are close to those of high‐quality SiO 2 , fluorinated SiO 2 and Al 2 O 3 dielectric coatings, are better than other commonly used inorganic dielectrics such as Si 3 N 4 , and surpass dielectrics like polyethylene or PTFE (Teflon) These values are also higher than those reported for parylene films . The high dielectric strength values exhibited by the adamantane films are particularly interesting for nanoelectronics because of the use of these films in nanoscale encapsulation of fragile nanoscale objects as presented below.…”

Characterization of aluminum oxyfluoride barrier in magnetic tunnel junctions

“…[4][5][6][7] However, the original aim of using CF 4 plasma was not fluorine inclusion but surface cleaning of thin films; strong etching of the oxide material took place along with enhancement of the device reliability and performance. [4][5][6][7] However, the original aim of using CF 4 plasma was not fluorine inclusion but surface cleaning of thin films; strong etching of the oxide material took place along with enhancement of the device reliability and performance.…”

Electrical properties and modeling of ultrathin impurity-doped silicon dioxides

“…Fluorine-and nitrogen-doped silicon oxides are the most popular candidates because of their versatile advantages; the former possesses the following characteristics: decreased dielectric constant K, enhanced oxidation rate, relaxed oxide stress, increased transconductance g m , decreased interface trap density D it , suppressed hot-electron induced generation of D it , increased breakdown field, improved radiation hardness, and stress hardness. [1][2][3][4][5][6][7][8] The latter has the subsequent distinctions of: increased hot-carrier immunity, decreased electron trapping due to the pileup of N at the SiO 2 -Si interface, increased current drive in MOSFETs, reduced boron ͑B͒ diffusivity caused by the formation of p ϩ -polysilicon gates, increased charge-to-breakdown, and reduced threshold voltage (V th ) shift and g m degradation. [9][10][11][12][13][14] In the literature reported so far, fluorinated silicon oxides can be fabricated using various methods such as immersing Si wafer in HF and then oxidizing the wafer, 6 ion-implanting with F, 8 or using liquid phase deposition, 15 while nitrided silicon oxides are capable of being fabricated from nitridation in NH 3 , NO, or N 2 O gases.…”

“…[1][2][3][4][5][6][7][8] The latter has the subsequent distinctions of: increased hot-carrier immunity, decreased electron trapping due to the pileup of N at the SiO 2 -Si interface, increased current drive in MOSFETs, reduced boron ͑B͒ diffusivity caused by the formation of p ϩ -polysilicon gates, increased charge-to-breakdown, and reduced threshold voltage (V th ) shift and g m degradation. [9][10][11][12][13][14] In the literature reported so far, fluorinated silicon oxides can be fabricated using various methods such as immersing Si wafer in HF and then oxidizing the wafer, 6 ion-implanting with F, 8 or using liquid phase deposition, 15 while nitrided silicon oxides are capable of being fabricated from nitridation in NH 3 , NO, or N 2 O gases. 16 -18 In order to obtain an improved oxide film carrying the properties mentioned above, it is our strong motive to incorporate both F and N into silicon dioxide to attain an oxide of remarkable quality with mixed characteristics.…”