Dielectric breakdown in aluminium nitride

Ruemenapp, T.; Peier, D.

doi:10.1049/cp:19990870

Cited by 9 publications

(4 citation statements)

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“…Figure 2(a) shows, using the nonlinear values for quartz [26], how the relative signal contributions may vary as a function of driving amplitude. For our devices, the dielectric breakdown of AlN occurs at a maximum of 50 to 100-volts, depending on the excitation frequency [27]. At that amplitude, the secondand third-order contributions could be as large as 1% of the linear response magnitude.…”

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confidence: 96%

Measurement of nonlinear piezoelectric coefficients using a micromechanical resonator

Boales

Erramilli

Mohanty

2018

Applied Physics Letters

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We describe and demonstrate a method by which the nonlinear piezoelectric properties of a piezoelectric material may be measured by detecting the force that it applies on a suspended micromechanical resonator at one of its mechanical resonance frequencies. Resonators are used in countless applications; this method could provide a means for better-characterizing material behaviors within real MEMS devices. Further, special devices can be designed to probe this nonlinear behavior at specific frequencies with enhanced signal sizes. The resonators used for this experiment are actuated using a 1-µm-thick layer of aluminum nitride. When driven at large amplitudes, the piezoelectric layer generates harmonics, which are measurable in the response of the resonator. In this experiment, we measured the second-order piezoelectric coefficient of aluminum nitride to be −(23.1 ± 14.1) × 10 −22 m/V 2 .

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confidence: 96%

Measurement of nonlinear piezoelectric coefficients using a micromechanical resonator

Boales

Erramilli

Mohanty

2018

Applied Physics Letters

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“…The difference in the insulation property of the AlN substrates is considered as follows. Assuming that the AlN crystal grains constituting the ceramics have no defects and provide sufficient insulation, the model based on the breakdown in small gas filled cracks in ceramics is the theory for the breakdown mechanism in AlN [5]. This mechanism describes the decrease of the electric strength of these small gaps compared to that of a normal gas filled space.…”

Section: Resultsmentioning

confidence: 99%

Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices

Hayashi

Izumi

Hemmi

et al. 2013

MSF

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Insulating properties of package for ultrahigh-voltage, high-temperature devices have been investigated. While all the packages have enough insulating strength at room temperature, deterioration of the insulating property at high temperature has been found with some packages. The authors have found that this deterioration is attributed to degrade the insulation property of AlN ceramics for DBC substrate at high temperature and that there is a various degree in the deterioration.

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“…Therefore, a high breakdown voltage is expected for the AlN piezoelectric film [40], [41] and this is approximately 100 V/µm [42], [43]. This value is well above the operating voltages of the implantable devices and CMOS ICs.…”

Section: Basic Principles Of Contour Mode Piezoelectric Resonatormentioning

confidence: 94%

Contour-Mode Ring-Shaped AlN Microresonator on Si and Feasibility of Its Application in Series-Resonant Converter

Imtiaz

Khan

Walling

2015

IEEE Trans. Power Electron.

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Microelectromechanicalsystems (MEMS) resonators on Si have the potential to replace the discrete passive components in a power converter. The main intention of this paper is to present a ring-shaped aluminum nitride (AlN) piezoelectric micro-resonator that can be used as an energytransferring device to replace inductors/capacitors in low power resonant converters for biomedical applications. Finite element simulation results have been provided, showing the mode of vibration at resonant frequency. The zero voltage switching (ZVS) condition for a series resonant converter incorporating the proposed MEMS resonator has been presented analytically and verified through experiment. This ZVS condition can be found in terms of the equivalent circuit parameters of the resonator. To the knowledge of the authors, ZVS analysis based on the equivalent electrical circuit model of the thin piezoelectric film resonators has not yet been reported in the literature. A CMOS-compatible fabrication process has beenproposed and implemented. In addition, the fabricated devices have been characterized and experimental results are included in the paper. The first contour mode AlN MEMS resonator with moderately low resonant frequency and motional resistance is reported in this paper with measured resonant frequency and motional resistance of 87.28 MHz and 36.728 Ω respectively.

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Dielectric breakdown in aluminium nitride

Cited by 9 publications

References 0 publications

Measurement of nonlinear piezoelectric coefficients using a micromechanical resonator

Measurement of nonlinear piezoelectric coefficients using a micromechanical resonator

Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices

Contour-Mode Ring-Shaped AlN Microresonator on Si and Feasibility of Its Application in Series-Resonant Converter

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