Dielectric Behaviour of Potassium Acetylacetonate

Abdel‐Malik, T. G.; Kassem, M. E.; Abdel-Latif, R.M.; Khalil, S. M.

doi:10.12693/aphyspola.81.681

Cited by 7 publications

(5 citation statements)

References 3 publications

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“…The change in the slope and hence the activation energy is interpreted as a change from extrinsic to intrinsic conduction [12]. The value of the thermal activation energy ∆E 1 is nearly 0.156 ± 0.019 eV and ∆E 2 is nearly 0.766 ± 0.12 eV, which is in good agreement with those obtained by other workers [3][4][5][6][7][8][9][10][11][12][13][14][15]. The temperature dependence of the resistivity for annealed films is shown in Fig.…”

Section: The Film Thickness Dependencesupporting

confidence: 89%

“…Phthalocyanines are similar to the macrocyclic planar aromatic compounds, exhibiting semiconducting properties. The electrical properties of phthalocyanines have received the greatest attention [3], with most work focusing on metal-substituted phthalocyanines, such as nickel phthalocyanine, NiPc [4], copper phthalocyanine, CuPc [5], zinc phthalocyanine, ZnPc [6] and molybdenum phthalocyanine, MoPc [7]. Therefore, the aim of the present work is to investigate and analyze the electrical transport properties of thermally evaporated phthalocyanine (H 2 Pc) thin films to determine some essential parameters and predict the electronic conduction properties.…”

Section: Introductionmentioning

confidence: 99%

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Electrical Transport Properties of Thermally Evaporated Phthalocyanine (H2Pc) Thin Films

2005

Egyptian Journal of Solids

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Thin films of H 2 Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity calculations were carried out at different temperatures in the range 298-473 K. Measurements of thermoelectric power confirm that H 2 Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of H 2 Pc at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-chargelimited conduction (SCLC) accompanied by an exponential trap distribution was dominated. The temperature dependence of current density allows determination of some essential parameters such as the hole mobility (µ h), the total trap concentration (N t), the characteristic temperature (T t) and the trap density P (E).

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Section: The Film Thickness Dependencesupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Electrical Transport Properties of Thermally Evaporated Phthalocyanine (H2Pc) Thin Films

2005

Egyptian Journal of Solids

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“…%, the density of state increases from 1.178  10 17 eV -1 cm -3 to 14.28  10 17 eV -1 cm -3 . Also, it was found that the values of αR (734.51(CdTe:0)-60.58 (CdTe:10)) are greater than 1 and the values of W (0.053 (CdTe:0) -0.029 (CdTe:10)) are greater than the thermal energy (0.0259 eV) which are essential conditions for the above mentioned factors to be consistent with the Mott's VRH [68,69]. Finally, αR 1 indicates that the carries are more localized in the trap states.…”

Section: Electrical Propertiesmentioning

confidence: 94%

Microstrucral, Optical and Electrical Characteristics of Cu-doped CdTe Nanocrystalline Films for Desinging of Absorber Layer in Solar Cell Applications

Alzaid

Hadia

El-Hagary

et al. 2021

Preprint

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This paper reports the microstrcure, optical and electrical characteristics of undoped and Cu doped CdTe nanostructured thin films prepared on glass substrates by electron beam evaporation technique. The Crystallographic study of X-ray diffraction shows that CdTe and Cu doped CdTe films crystallize in the form of a cubic zinc blende structure. Microstructure analysis reveals that as the Cu doping level increases, the average crystallite size increases, while the microstrian decreases due to the improvement of the crystallinty, thereby reducing defects. XRD and AFM investigations confirmed the nanostructure characteristic of undoped and Cu doped films. It was found that the optical band gap energy increases from 1.485 eV to 1.683 eV as the Cu concentration increases from 0 wt. % to 10 wt. %, which may be related to the Burstein-Moss effect. The refractive index is calculated from the Swanepoel envelope method and found to decrease with the increase of the Cu doping due to the decrease in the prolizability. Similarly, the extinction coefficient decreases with the increase of Cu in CdTe matrix. The dc electrical conductivity is found to increase with increasing Cu doping, which is attributed to the increase in the grain size, thereby reducing the scattering of the grain boundary. Furthermore, two conduction mechanisms of the carrier transport in nanostrcutured undoped and Cu doped CdTe films were observed. The low temperature dependence of the conductivity of undoped and Cu doped CdTe nanostructured films is explained based on Mott’s variable range hopping conduction mechanism model (VRH). Interestingly, the calculated values of hopping distance R, the hopping energy W and the the density of states at the Fermi level N(EF) are consistent with the Mott's VRH. Finally, Hall effect measurements show that all the films have p- type conduction behavior. Besides, the results show that as Cu doping level increases, the carrier concentration and the Hall mobility increase due to the decrease in grain boundary scattering with the increase in grain size. Accordingly, it can be concluded that by increasing the Cu doping level in the CdTe film, the conductivity is increased, thereby improving the performance of the CdTe absorber layer in the solar cell structure.

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“…36) In this region, the current can be described by the thermionic emission of carrier over the Schottky barrier of Au/CuPc/n-GaN structure. 37,38) On the other hand, the current increased exponentially with a value of m = 4.1 and 12.6 in region-II and region-III, respectively. This power law relation, with m > 2, is characteristic of space-charge-limited current associated with the filling of traps distributed exponentially in energy.…”

Section: )mentioning

confidence: 98%

Electrical Properties and Carrier Transport Mechanism of Au/<i>n</i>-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

et al. 2014

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We investigated the electrical characteristics of Au/n-GaN Schottky rectifier incorporating a copper pthalocyanine (CuPc) interlayer using currentvoltage (IV), capacitancevoltage (CV) and conductancevoltage (GV) measurements. The barrier height of the Au/CuPc/n-GaN Schottky contact was higher than that of the Au/n-GaN Schottky diode, indicating that the CuPc interlayer influenced the space charge region of the n-GaN layer. The series resistance of Au/CuPc/n-GaN Schottky contact extracted from the CV and GV methods was dependent on the frequency. In addition, the series resistance obtained from CV and GV characteristics was comparable to that from Cheung's method at sufficiently high frequencies and in strong accumulation regions. The forward log Ilog V plot of Au/CuPc/n-GaN Schottky contact exhibited four distinct regions having different slopes, indicating different conduction mechanisms in each region. In particular, at higher forward bias, the trap-filled space-charge-limited current was the dominant conduction mechanism of Au/CuPc/n-GaN Schottky contact, implying that the most of traps were occupied by injected carriers at high injection level.

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Dielectric Behaviour of Potassium Acetylacetonate

Cited by 7 publications

References 3 publications

Electrical Transport Properties of Thermally Evaporated Phthalocyanine (H2Pc) Thin Films

Electrical Transport Properties of Thermally Evaporated Phthalocyanine (H2Pc) Thin Films

Microstrucral, Optical and Electrical Characteristics of Cu-doped CdTe Nanocrystalline Films for Desinging of Absorber Layer in Solar Cell Applications

Electrical Properties and Carrier Transport Mechanism of Au/<i>n</i>-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

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