Dielectric behavior of perovskite glass ceramics

Antiferroelectric materials form a potential candidate for ceramic-based high energy storage applications owing to their low loss and high energy density. Here, we demonstrate that the antiferroelectric phase with high energy-storage properties in 0.94Bi 0.5?x Na 0.5-x TiO 3 -0.06BaTiO 3 (BNTx-BT) ceramics at room-temperature is modulated by tailoring compositions. Our results show that the metastable antiferroelectric phase at room-temperature modulated by the Bi/Na ratio with a high excess in Bi 3? and/or a deficiency in Na ? , can be induced to the FE phase by applying electrical field, leading to double hysteresis. The high energy storage density W = 1.76 J/cm 3 for x = 0.05 BNTx-BT ceramics by modulating Bi/Na ratio is obtained, suggesting a promising candidate lead-free energy-storage material.

Section: Introductionmentioning

confidence: 99%

Tailoring antiferroelectricity with high energy-storage properties in Bi0.5Na0.5TiO3–BaTiO3 ceramics by modulating Bi/Na ratio

Zhou

et al. 2016

“…Obviously, by maintaining a high dielectric constant, our primary task is to increase the E b of the ceramic material. Recently, the dielectric property of alkali-free glass (composition of the glass is almost free of alkali metal ions) had been extensively studied [4][5][6][7][8], Smith [5] tested the dielectric properties of an alkali-free barium boron aluminosilicate (BaO-B 2 O 3 -Al 2 O 3 -SiO 2 ) glass, the dielectric breakdown strength in bulk glass nearly approached 12 MV/mm while its permittivity was about 6. In addition, compared to conventional dielectric ceramic, glass ceramics had a higher breakdown strength because glass additives would reduce grain size and partly eliminated pores to improve the density of ceramic [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Dielectric properties of manganese-doped TiO2 with different alkali-free glass contents for energy storage application

Liu

Zhang

Wei

et al. 2016

The dielectric properties and microstructures of 0.05 mol% manganese (Mn)-doped TiO 2 with different alkali-free glass (BaO-B 2 O 3 -Al 2 O 3 -SiO 2 ) contents were investigated. The alkali-free glass which coated Mn-doped TiO 2 ceramic powders was prepared by sol-gel method, all samples were sintered at 1100°C for 6 h. Microstructure observation indicated that the grain size greatly reduced and microstructure uniformity was improved by adding 15 wt% alkali-free glass. The alkali-free glass did not only decrease the dielectric loss (\0.01), but also significantly enhanced the frequency/temperature stability of dielectric properties. The energy density of 15 wt% glass-ceramics could achieve 1.15 J/cc with average breakdown electric field (E b ) of 50.17 kV/mm, the polarization-electric field (P-E) hysteresis loops showed that glass-ceramic composites had a very low energy loss.

“…In general, the energy density of a linear dielectric is defined as U = 0.5e 0 e r E 2 , where e 0 , e r , E are the permittivity of free space, the relative dielectric constant and the applied electric field, respectively. At present, much work [6,7] has been performed on SrTiO 3 -based dielectrics to increase the dielectric constant e r and/or dielectric strength. However, comprehensive breakdown characteristics of SrTiO 3 dielectric have not been reported earlier.…”

Section: Introductionmentioning

confidence: 99%

Dielectric breakdown characteristics of sol–gel derived SrTiO3 films

Peng

Yao

et al. 2016

Dielectric breakdown behavior of sol-gel derived SrTiO 3 films has been studied systematically. The dielectric strength and leakage characteristics of SrTiO 3 films were observed to have a strong dependence on the top electrode materials. Compared with films with Ti or Al electrode, SrTiO 3 films with Au electrode exhibited relatively low dielectric breakdown strength. Simultaneously, a broad area of damage occurred in the Au electrode after breakdown, which is closely related to the self-healing breakdown mechanism. The corresponding leakage current kept the same order of magnitude when the electric field was higher than 100 MV/m. The higher dielectric strength of the films with Ti or Al electrode is attributed to anodic oxidation of metal electrode.