Dielectric analysis and electrical conduction mechanism of La_1−xBi_xFeO₃ceramics

Abstract

Bulk-phase polycrystalline La1−xBixFeO3 (x = 0.1, 0.2, 0.3, 0.4, and 0.5) ceramics were prepared by citric sol–gel and sintering methods.

Structural, morphological, Raman, dielectric and electrical properties of La1−2xBaxBixFeO3 (0.00 ≤ x ≤ 0.20) compounds

“…It was reported that the insertion of Bi 3+ in the A site of LaFeO 3 acts to decrease the activation energy values. 53 The behavior of activation energy (Fig. 9(f)) and resistance are quite similar to the crystallite size behavior previously calculated by the Williamson-Hall formalism; the compound with x ¼ 0.10 presents the lowest value of resistance and activation energies of both grain and grain boundary contributions.…”

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiOxCy:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

“…The semicircular arcs in the high-frequency and low-frequency regions are the contributions of the nanocrystalline and amorphous silicon components, respectively. The arcs are depressed on the Y -axis and asymmetric, indicating non-Debye-like relaxation in the samples . The arc diameter of every sample decreases with increasing temperature, implying a temperature-induced reduction of the electrical resistance that signifies the semiconductor-like characteristics of the nc-SiO x C y :H thin films…”

“…The arcs are depressed on the Y-axis and asymmetric, indicating non-Debye-like relaxation in the samples. 56 The arc diameter of every sample decreases with increasing temperature, implying a temperature-induced reduction of the electrical resistance that signifies the semiconductorlike characteristics of the nc-SiO x C y :H thin films. 57 Detailed analysis of the individual contribution from the nanocrystalline grain and amorphous silicon component is performed considering the equivalent circuit shown in Figure 9a.…”

Effect of Heat Treatment on Structural, Magnetic and Electrical Properties of La2FeMnO6

“…The SPH model usually holds conduction above charge ordering in the mixed-valence manganite samples, which is a thermally activated mechanism to the weakly localised carriers [3,19]. Herein, E ranged from 0.20 to 1.0 eV, indicating that the conduction mechanism is dominated by p-type polaron hopping [20]. Furthermore, the lowest E was obtained in Sample A, followed by Sample B and sample C. This can be explained in terms of the corresponding change in Fe/Mn-O-Fe/Mn bond angles, since the hopping conduction mechanism acts across the Fe/Mn cation sites.…”

“…A lowering of activation energy is required to improve the large electrochemical reaction in the system. This may lead to La 2 FeMnO 6 becoming a promising candidate for use as a catalyst material on electrode surfaces in electrochemical reaction applications [20]. Consequently, this study is important for understanding fundamental physical phenomena, and for informing the development of electrodes in electrochemical systems.…”