DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures

Sasaki, K. R. A.; Simoen, Eddy; Claeys, Cor; Martino, João Antônio

doi:10.1109/sbmicro.2016.7731329

Cited by 1 publication

(1 citation statement)

References 16 publications

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“…In recent years, ultra-thin body and buried oxide fullydepleted silicon-on-insulator (UTBB-FDSOI), a powerful competitor of sub-28 nm planar complementary metal-oxidesemiconductor technology [7][8][9][10], has been a focus of study. With the scaling of the gate length, short-channel effects (SCEs), such as threshold voltage degradation and draininduced-barrier-lowering, increase the static power consumption of devices, leading to poor performance.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of 22 nm UTBB-FDSOI technology with an ultra-wide temperature range

Wang¹,

Bi²,

Bu³

et al. 2022

Semicond. Sci. Technol.

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The performance of the ultra-thin body and buried oxide (BOX) fully-depleted silicon-on-insulator (UTBB-FDSOI) metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on a 22 nm technology node is investigated in this paper over an ultra-wide temperature range from 6 K to 550 K. The current-voltage (I-V) characteristics under wide temperature range conditions are shown, including the influence of the back-gate bias (Vbg). The important electrical parameters, such as threshold voltage (Vt), subthreshold swing (SS), ON-state current (Ion), and OFF-state current (Ioff), are extracted with temperature changes. From 550 K to 6 K, Vtincreased by 0.21 V, Ioff decreased nearly 6 orders of magnitude, and the gate-induced drain leakage (GIDL) current decreased by nearly 8 orders of magnitude. The main physical mechanisms for the changing electrical performance with temperature are the variation of carrier concentration, mobility, and energy band. By utilizing a technology computer-aided design (TCAD) simulation, the temperature dependence of the device performance is discussed and analyzed.

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Section: Introductionmentioning

confidence: 99%