Diamond UV photodetectors: Sensitivity and speed for visible blind applications

McKeag, Robert D.; Jackman, Richard B.

doi:10.1016/s0925-9635(97)00274-4

Cited by 84 publications

(21 citation statements)

References 17 publications

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“…3 Several attempts were made to build up photodetectors from natural or synthetic diamonds. 4,5 A great effort is also being devoted to produce devices from synthetic single crystal diamond (SCD) films grown by homoepitaxial chemical vapor deposition (CVD) onto low-cost SCD substrates. 6,7 Different photodetector structures based on CVD diamond have been reported by several research groups.…”

Section: Introductionmentioning

confidence: 99%

Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes

Ciancaglioni

Venanzio

Marinelli

et al. 2011

Journal of Applied Physics

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X-ray and UV photovoltaic Schottky photodiodes based on single crystal diamond were recently developed at Rome “Tor Vergata” University laboratories. In this work, different rectifying metallic contact materials were thermally evaporated on the oxidized surface of intrinsic single crystal diamond grown by chemical vapor deposition. Their impact on the detection performance in the extreme UV and soft x-ray spectral regions was studied. The electrical characterization of the metal/diamond Schottky junctions was performed at room temperature by measuring the capacitance–voltage characteristics. The diamond photodiodes were then tested both over the extreme UV spectral region from 10 to 60 eV by using He-Ne DC gas discharge as a radiation source and toroidal vacuum monochromator, and in the soft x-ray range from 6 to 20 keV at the Diamond Light Source synchrotron x-ray beam-line in Harwell (UK). In both experimental setups, time response and spectral responsivity were analyzed for all the investigated Schottky contact materials. A good agreement between the experimental data and theoretical results from Monte Carlo simulations is found

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Section: Introductionmentioning

confidence: 99%

Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes

Ciancaglioni

Venanzio

Marinelli

et al. 2011

Journal of Applied Physics

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“…Readily available low complexity devices would be favourable for applications such as imaging of visible-blind UV radiation for monitoring of sterilisation, lithography, fl ame detection, environmental studies, and military applications. [ 4 ] Visible-blind detectors are extensively reported in literature with detection materials ranging from semiconductors such as silicon [ 5 ] and gallium nitride [ 6 ] to diamond [ 7 ] and metal oxides such as zinc oxide (ZnO). [8][9][10][11] However, there are limited reports of visible-blind imaging devices especially with fl exible characteristics.…”

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confidence: 99%

Visible‐Blind UV Imaging with Oxygen‐Deficient Zinc Oxide Flexible Devices

Gutruf

Walia

Sriram

et al. 2015

Adv Elect Materials

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which allows for the use of standard digital electronics compatible measurement set up, ultimately allowing for a device with higher degree of integration. This synthesis strategy avoids complex synthesis routes such as doping and increases carrier concentration upon UV exposure, toward enhanced sensitivity under standard temperature and pressure.As a substrate for the ZnO-based imaging sensor, we chose commercially available copper-cladded polyimide, owing to its high temperature and chemical stability. The copper thin fi lm layer is defi ned as the electrode using standard lithography technique and wet etching. This layer forms the base of the sensor, as shown in Figure 1 a. The robust copper layer enables the facile interfacing of the sensor as well as integration with existing technology through well-established techniques such as soldering. Furthermore, thin metal fi lms have been proven to adhere well to polyimide fi lms permitting operation in strained states. [ 17,18 ] To isolate the electrode layer from the bridge that connects the individual electrodes, we use photopatternable spin-on polyimide as a thin fi lm isolation layer as seen in Figure 1 a. To connect the now-isolated individual electrodes with the interfacing pad, we use an electron beam evaporated gold thin fi lm (250 nm with 100 nm chromium adhesion layer) that offers high electrical conductivity with low fi lm thicknesses. This so-called bridge is formed by standard photolithography (Figure 1 a,b). The sensing elements are then synthesised on top of the copper electrodes. The sensing elements comprise of oxygen-defi cient ZnO deposited by reactive magnetron sputtering. The sensing elements (referred to as pixels) are patterned by standard photolithography methods and wet etching. Detailed information on the fabrication process can be found in the Experimental Section.The resulting device is 30 µm thick and highly fl exible (Figure 1 c), which will be quantifi ed later in the manuscript. It comprises of 256 pixels spread over 57 × 89 µm with a 2.6 mm pitch. In order to ascertain the composition of the ZnO fi lm, we characterised the atomic concentrations of the zinc and oxygen via X-ray photoelectron spectroscopy (XPS). It can be seen in Figure 2 a that the as-synthesized fi lm has a uniform oxygen defi ciency profi le throughout the fi lm thickness, furthermore we show a comparison with a stoichiometric fi lm in the Supporting Information ( Figure S1, Supporting Information). Furthermore, the as-deposited fi lms are preferentially (002) oriented as confi rmed by X-ray diffraction ( Figure S2, Supporting Information).To validate the suitability of the oxygen-defi cient ZnO, we characterised the optical response of a single pixel in detail. In order to analyse the response of a single pixel to UV exposure, the sample was irradiated with UV light using a 365 nm light emitting diode (LED). A strong decrease in resistance can be observed (Figure 2 b) under UV exposure. It is also observed Ultraviolet (UV) imaging instruments have demanding requir...

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“…We have also reported evidence that further methane±air treatments could improve the turn-off time and sensitivity following device exposure to deep UV light (200 nm) for periods of 20 s [4]. To study this behaviour more systematically, photoconductive devices were fabricated on CVD diamond and then subjected to a number of successive methane±air treatments.…”

Section: Resultsmentioning

confidence: 99%

Diamond Electronics: Defect Passivation for High Performance Photodetector Operation

Whitfield

Lansley

Gaudin

et al. 2000

phys. stat. sol. (a)

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Deep UV, visible blind, photoconductive devices fabricated on polycrystalline CVD diamond using inter-digitated planar electrodes have shown promising characteristics. The`as-fabricated' device performance is insufficient for many applications; a particularly demanding example is the monitoring of high power excimer lasers operating in the UV, which ideally require visible-blind, radiation hard fast UV detectors. However, post-growth treatments can strongly modify the performance level achieved. In this paper, we show that sequentially applied treatments can progressively change both the gain and speed of these devices. We have used charge sensitive deep level transient spectroscopy (Q-DLTS) to study the effect of these treatments on the defect structure of CVD material. For the first time, we report the realisation of diamond photoconductive devices capable of operating at more than 1 MHz at 193 nm.

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Diamond UV photodetectors: Sensitivity and speed for visible blind applications

Cited by 84 publications

References 17 publications

Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes

Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes

Visible‐Blind UV Imaging with Oxygen‐Deficient Zinc Oxide Flexible Devices

Diamond Electronics: Defect Passivation for High Performance Photodetector Operation

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