Diamond Schottky p–n diode with high forward current density

Abstract

We successfully fabricated a diamond diode, namely a Schottky p–n diode (SPND), which is composed of a fully depleted n‐type active layer sandwiched between a highly doped p‐type layer and a Schottky metal. The diamond SPND showed a high forward current density (over 4000 A cm−2 at 6 V) with a low built‐in voltage (∼1.5 V) at room temperature while maintaining a high rectification ratio of ∼1010. Further improvement of the high forward current density characteristics was found at high temperature. The SPND can be realized with higher forward current density than that of conventional diamond Schottky barrier diode, p–n diode, and recently proposed merged diodes, while maintaining the high rectification ratio.

Device Design of Diamond Schottky-pn Diode for Low-Loss Power Electronics

“…17,18) Figure 1 shows the basic structure of the diamond SPND. The diamond SPND is composed of a lightly P-doped n-type layer sandwiched between a highly boron (B)-doped p-type layer and a Schottky metal layer.…”

S4-P1: Wide and extreme bandgap semiconductor devices for power electronics applications

“…High voltage vertical and lateral diamond diodes have been reported [12][13][14][15]. 3.7kV diamond rectifiers have been implemented with 20m thick boron-doped epi, but only achieving a breakdown field of 1.85MV/cm despite the usage of a proton implanted JTE termination [12].…”

“…A novel Schottky pn diamond diode has been demonstrated with high conduction current density (as high as 1000A/cm 2 ) (see Fig. 4) [15] and this structure may circumvent the degradation of avalanche breakdown field with extrinsic doping. SiC pin junction rectifiers will be preferred for blocking voltages higher than 5kV [16].…”

Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis

“…However, first encouraging results on LEDs [1] or Schottky diodes [2] have been obtained recently and represent a good motivation to follow in developing new devices as FETs. Indeed, the very large thermal conductivity of diamond (22 W/cm·K, around five times that of Cu or SiC) makes it very attractive for power devices [3].…”