Diamond p–i–n Diode with Nitrogen Containing Intrinsic Region for the Study of Nitrogen‐Vacancy Center Electroluminescence

Abstract

The results of a study of diamond p–i–n diode with a nitrogen‐doped intrinsic region on a substrate with the (001) orientation are presented. When the forward voltage is applied to the diode, a high current density of about 103 A cm−2 is obtained. Two narrow lines are detected in the electroluminescence spectrum of the p–i–n diode: one at a wavelength of 575 nm corresponding to the emission of the NV center (nitrogen‐vacancy color center) in a neutral charge state, and the second narrow line, which previously has not been observed in the electroluminescence spectra, at a wavelength of 533 nm. The line widths at room temperature are about 7 and 3 nm, respectively. By comparing the emission intensities of NV centers using the same optical registration system for electroluminescence and photoluminescence, the emission rate of NV centers during electroluminescence is estimated to be about 106 photon s−1, which allows to consider a diode of such design as a possible candidate to create single‐photon sources.

SiV Centers Electroluminescence in Diamond Merged Diode

“…The manufacturing process of the diode was described in detail in ref. [9]. A structure consisting of two layers of diamond was grown on the substrate: heavily boron doped diamond with a boron concentration [B] = 1.69 × 10 21 cm −3 and thickness of 300 nm and a silicon doped layer with a silicon concentration [Si] = 5.2 × 10 18 cm −3 and thickness of 570 nm.…”

“…A distinctive feature of the fabricated diode in comparison with the diode considered in ref. [9] was a significant expansion of the contact area to the upper part of the mesa structure with a groove located on it. The diode design drawing is shown in Figure 1b.…”

“…The use of an ensemble of centers is preferable at the initial stage of research. In ref., [9] the study of the electroluminescence of an ensemble of NV centers made it possible to discover a new zero‐phonon line in the electroluminescence spectrum. The detection of this line would be difficult when studying the electroluminescence of single color center.…”

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

“…However, single emitters have not been isolated under neither optical nor electrical pumping yet. The electroluminescence of NV centers was also studied in diamond p-i-n diodes [124,125] similar to that in ref. [63], but singlephoton emission has not been reached due to the poor quality of the fabricated structures.…”

Электролюминесценция В Алмазе

“…В 2003 году Ван и соавторы получили в алмазе, выращенном методом газохимического осаждения (ГХО), электролюминесценцию на центре Ce 3+ при 150 В [6]. В 2020 году Лобаев и соавторы показали возможность создания pi-n-диода на NV-центрах в ГХО алмазе [7]. Для этого на алмаз требовалось подать напряжение около 600 В, плотность тока составляла около 10 3 А/см 2 .…”