Diamond MESFET using ultrashallow RTP boron doping

Tsai, W.; Delfino, M.; Hodul, D.; Riaziat, M.; Ching, L.Y.; Reynolds, G. J.; Cooper, Christopher B.

doi:10.1109/55.75749

Cited by 69 publications

(13 citation statements)

References 11 publications

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“…From natural diamond stones it is known that boron acts as an acceptor with an acceptor level of 0.368 eV above the valence band edge. Boron doping can be easily achieved by in situ doping during growth [58], by ion implantation [59], or by high-temperature diffusion [60]. Isolated substitional nitrogen and the A centre (a pair of nearest-neighbor nitrogen atoms) have donor-like properties with energies of 1.7 and 4.0 eV, respectively.…”

Section: Doping Of Diamondmentioning

confidence: 99%

High—temperature Sensors Based on SiC and Diamond Technology

et al. 1999

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Section: Doping Of Diamondmentioning

confidence: 99%

High—temperature Sensors Based on SiC and Diamond Technology

et al. 1999

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“…Both geometrically (covalent radius of boron atom is 0.088 nm whilst that of carbon atom is 0.077 nm) and energetically [62] boron atoms are probably the only dopants that can be substitutes for carbon atoms in the diamond lattice. Boron doping into diamond thin films can be done by using any of the following: (i) gas phase manipulations while synthesizing diamond thin films via CVD routes, (ii) ion-implantation, and (iii) high temperature diffusion [25]. In the next section, various aspects of gas phase synthesis (in situ) of BDD thin films will be discussed.…”

Section: International Journal Of Electrochemistrymentioning

confidence: 99%

“…The conductivity of diamond thin films can be attuned to an application requirement typically by carrying out suitable doping events. Amongst the available conductive (doped, p-and n-type [9][10][11][12][13][14][15][16]) diamond thin films, the p-type semiconducting boron-doped diamond (BDD) thin films [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] are the most popular ones and are being studied extensively. BDD thin films are synthesized by substituting some of the sp 3 hybridized carbon atoms in the diamond lattice with boron atoms.…”

Section: Introductionmentioning

confidence: 99%

A Brief Review on theIn SituSynthesis of Boron-Doped Diamond Thin Films

Srikanth

Kumar

2012

International Journal of Electrochemistry

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Diamond thin films are well known for their unsurpassed physical and chemical properties. In the recent past, research interests in the synthesis of conductive diamond thin films, especially the boron-doped diamond (BDD) thin films, have risen up to cater to the requirements of electronic, biosensoric, and electrochemical applications. BDD thin films are obtained by substituting some of the sp 3 hybridized carbon atoms in the diamond lattice with boron atoms. Depending on diamond thin film synthesis conditions, boron doping routes, and further processing steps (if any), different types of BDD diamond thin films with application-specific properties can be obtained. This paper will review several important advances in the synthesis of boron-doped diamond thin films, especially those synthesized via gas phase manipulation.

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“…23 Moreover, B doping can be achieved by indiffusion at high temperature. 24,25 Since this yields p-type diamond under indiffusion conditions where B s is mobile, B appears to adopt the B s form rather than B 2 , which is in stark contrast to the efficient A-center formation in N-doped material when N s becomes mobile.…”

Section: A Impurity Pairs In Diamondmentioning

confidence: 99%

Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond

MacLeod¹,

Murray²,

Goss³

et al. 2009

Phys. Rev. B

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The role of configurational, vibrational, and electrical terms in the temperature-dependent binding energy of impurity pairs at high temperatures is considered by use of the example of boron and nitrogen in diamond. To calculate the free binding energy, we have developed a formalism for quantification of the free carrier contribution to the free binding energy. For doping concentrations of 10 18 cm −3 , N 2 is favored over isolated substitutional N for temperatures up to ϳ2600 K, and boron favors the isolated substitutional form above ϳ750 K. Comparing with typical experimental conditions for growth or heat treatment, we show that the calculations account for the different behavior observed for B and N. For boron, the electronic contribution is large at low concentrations at the temperature at which B s is able to migrate and cannot be neglected.

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Diamond MESFET using ultrashallow RTP boron doping

Cited by 69 publications

References 11 publications

High—temperature Sensors Based on SiC and Diamond Technology

High—temperature Sensors Based on SiC and Diamond Technology

A Brief Review on theIn SituSynthesis of Boron-Doped Diamond Thin Films

Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond

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