2012
DOI: 10.1016/j.solidstatesciences.2012.01.015
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Diamond films grown without seeding treatment and bias by hot-filament CVD system

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Cited by 4 publications
(6 citation statements)
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“…The parameters studied while synthesizing a variety of carbon thin thick films are given below with SAMPLE name and so in the Figure captions of surface topography and fracture cross-section images. Further details of materials" specification, seeding treatment and the process are given elsewhere [14,28,[38][39][40][41]. The preparation procedure of unseeded silicon substrates is given elsewhere [14], whereas, a detailed process of preparing molybdenum-coated titanium substrates and temperature measurement are given in our previous study [39].…”
Section: Methodsmentioning
confidence: 99%
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“…The parameters studied while synthesizing a variety of carbon thin thick films are given below with SAMPLE name and so in the Figure captions of surface topography and fracture cross-section images. Further details of materials" specification, seeding treatment and the process are given elsewhere [14,28,[38][39][40][41]. The preparation procedure of unseeded silicon substrates is given elsewhere [14], whereas, a detailed process of preparing molybdenum-coated titanium substrates and temperature measurement are given in our previous study [39].…”
Section: Methodsmentioning
confidence: 99%
“…In Figure S5, we can observe such behaviours where crystallites grew protruding through the cavity at the surface of molybdenum-coated titanium substrate (in "a") and growth rate was higher along the edges of unseeded silicon substrate (in "b") revealing rich nucleation at the edges/corners of the substrate material. An ultrasonically treated surface of silicon substrate is an alternative way to achieve improved rate of nucleation where uniformly distributed pits acted as nucleation sites to deposit carbon atoms in graphitic state [14,38]. The rate of deposition of carbon atoms in evolving certain sized grains or crystallites become uniform at the later stage of the process and their faces start formulating smooth and faceted surface as long as operating under the fixed localized process parameters.…”
mentioning
confidence: 99%
“…However, our earlier studies show that film synthesised with seeding treatment have higher growth rate (overall) compared to those grown without seeding treatment. 7,8 The higher growth rate for films synthesised at 3?0 vol.-%CH 4 is due to an increase in methyl radicals.…”
Section: Resultsmentioning
confidence: 99%
“…A detailed description of dry ultrasonic process is given in our previous work. 7,8 For comparison purposes, diamond films were also grown over seeded substrates along with substrates prepared by dry ultrasonic process. The average grain size of diamond powder was 5 mm, while the duration for seeding treatment was 10 min.…”
Section: Methodsmentioning
confidence: 99%
“…Over the past decade, due to the outstanding physical and chemical characteristics such as high hardness, good optical transparency, excellent thermal conductivity and carrier mobility and very long free-carrier recombination lifetimes [1], single crystal diamond (SCD) prepared by chemical vapour deposition (CVD) has been widely applied as the precision cutting tools, the fabrication of gem stones and the transparent of optical window [2]. Recently, microwave plasma CVD (MPCVD) [3], hot filament CVD [4] and direct current arc plasma jet CVD (DC arc plasma jet CVD) [5] have been gradually developed for SCD fabrication, and the SCD products with large size and high quality had been successfully synthesised [6]. Many researches on the SCD synthesised by above methods have been carried out, such as the optimisation of deposition parameters [3], the growth mechanism [6] and rate [7], and the quality [8], mechanical [9] and optical performance of as-synthesised SCD [10].…”
Section: Introductionmentioning
confidence: 99%