Diamond field effect transistors—concepts and challenges

Aleksov, A.; Kubovič, M.; Kaeb, N.; Spitzberg, U.; Bergmaier, A.; Dollinger, G.; Bauer, Th.; Schreck, M.; Stritzker, B.; Kohn, E.

doi:10.1016/s0925-9635(02)00401-6

Cited by 101 publications

(44 citation statements)

References 23 publications

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“…The first relies on a surface-near p-type channel induced by hydrogen termination without extrinsic doping [4,5]. The second follows the concept of a boron (acceptor) delta doping profile, where full activation is obtained by a high peak concentration above 10 20 cm − 3 [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Diamond MISFET based on boron delta-doped channel

El-Hajj

Denisenko

Kaiser

et al. 2008

Diamond and Related Materials

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Section: Introductionmentioning

confidence: 99%

Diamond MISFET based on boron delta-doped channel

El-Hajj

Denisenko

Kaiser

et al. 2008

Diamond and Related Materials

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“…Cross-section of ALD-FET in GaAs. which participates directly in the conduction channel [4,17,18]. On the other hand, the presence of the p-type quantum well produces a two-dimensional gas of holes (2DHG) and increase the electronic confinement in the n-type δ-doped quantum well.…”

Section: Introductionmentioning

confidence: 99%

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Oubram¹,

Gaggero‐Sager²,

Ouadou³

2011

PIER

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Abstract-According to the scaling-down theory, the ALD-FET (Atomic Layer Doping-Field Effect Transistor) structure has attracted a lot of attention in view of its uses for developing devices with very short channels and for achieving very-high-speed operation. Therefore, there is a strong need to obtain an accurate understanding of carrier transport (mobility and conductivity) in such devices. In this work, we report the carrier transport based on the electronic structure of devices. Our results include analytical expressions of both mobility and conductivity. Our analytical expressions for the mobility and conductivity allow us to analyze transport in ALD-FET. We report regions where this device operates in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of the system. The width of the Ohmic region as well as the NDR (Negative Differential Resistance) properties of the system are also characterized.

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“…In addition, the high thermal conductivity, the high mobility and the high electrical breakdown field make diamond an interesting material for devices such as Schottky diodes and field-effect transistors. [1][2][3] It is known that an hydrogen termination of the diamond surface gives rise to a high p-type surface conductivity and to a negative electron affinity. [4,5] Applications based on these peculiar properties of the diamond layer have been developed.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Different Surface Terminations on Electrical Transport and Emission Properties for Freestanding Single Crystalline (100) CVD Diamond Samples

et al. 2007

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The surface density of states of hydrogen and oxygen terminated diamond is an important parameter from the point of view of electrical transport properties at the surface. In addition, the presence of surface states has a detrimental influence on the electrical contact properties. Therefore it is of great importance that the influence of different species on the surface-related properties of the diamond layer is well understood.In this work (100)-oriented CVD diamond films are terminated using a hydrogen plasma with and without small additions of oxygen (1 to 4%). XPS and UPS measurements are performed to look at the influence of this addition on the surface band gap of the diamond samples. Using the TOF (Time-of-Flight) technique a comparison is made between oxidized and (differently) hydrogenated diamond surfaces. The results clearly show that the different terminations of the diamond surface have an influence on the electrical transport properties. For the oxidized surface, it is found that defect states are created in the surface band gap, increasing trapping. Contrary to this, fully hydrogenated layers behave differently in a way that suggests that the surface DOS is significantly reduced. This fact can be confirmed when applying an electric field on the CVD diamond samples sandwiched between two metallic electrical contacts. In case of a metal deposited on a hydrogen terminated surface one can see a clear UV light emission related to free exciton recombination in the contact-diamond-junction region. When the surface is oxidized the UV emission is damped, an effect which is attributed to the parallel recombination channels via the surface states.

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Diamond field effect transistors—concepts and challenges

Cited by 101 publications

References 23 publications

Diamond MISFET based on boron delta-doped channel

Diamond MISFET based on boron delta-doped channel

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

The Influence of Different Surface Terminations on Electrical Transport and Emission Properties for Freestanding Single Crystalline (100) CVD Diamond Samples

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