Diamond Detector for Nuclear Radiation

Konorova, E. A.; Koslov, S F

doi:10.1070/pu1970v012n04abeh004066

Cited by 11 publications

(17 citation statements)

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“…2). A similar level was found ii; [5]. I n Section 4 it will follow from reasons discussed there that this level is assumed to be acceptor-type.…”

Section: Defect Levelssupporting

confidence: 52%

“…Dl donors, and besides, such high defect densities would not even allow the crudest comparison of our results with those given in [5]. The remaining level scheme for the complex defect N will consist of an acceptor level and a donor level.…”

Section: Discussionmentioning

confidence: 85%

“…Only in [5] coincidence of extreme quenching rate and sufficiently high quenching itemperatures produces an additional donor density large enough to convert initial p-type crystals to n-type. Thus the Fermi level is shifted more or lessdepending on the initial doping and additional net donor concentrationinto the upper half of the band gap where now other levels, E , -0.35 eV with regard to [ 5 ] , may be detected by thermal activation analysis. We did not find similar experiments in n-type silicon in the literature on this subject.…”

Section: Introductionmentioning

confidence: 94%

“…Therefore, if the defects retained in the samples after being quenched depend on quenching speed and quenching temperature, one should not expect to get the upper limit of defect concentration. Now it is well established from [5] indicate a remarkable influence of quenching temperature on defect generation. Furthermore, the present work gives strong support to both of these properties of quenched-in defects.…”

Section: Introductionmentioning

confidence: 99%

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Thermally induced defects in n-type and p-type silicon

Leskoschek¹,

Feichtinger²,

Vidrich³

1973

Phys. Stat. Sol. (a)

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n‐type and p‐type silicon crystals were quenched from 900 to 1400 °C into a cooling liquid. From Hall coefficient and conductivity measurements a model was deduced, in which the changed electrical properties of the quenched samples are caused by an additional shallow donor and a more complex type of defect which acts – depending on Fermi level – as an acceptor or donor, respectively. An energy level nearer than 0.07 eV to the bottom of the conduction band was estimated for the shallow donor whereas an acceptor level EA = EC − 0.32 eV and a donor level ED = EV + 0.40 eV are connected to the more complicated defect. A migration energy of about 1 eV is ascribed mainly to the shallow donor, which seems also to be responsible for a distinct maximum of defect generation at 1110 °C quenching temperature. According to the given model a dependence of quenched‐in defects on the initial doping does not appear to be very important up to net acceptor or donor densities of about 5 × 1015 cm−3.

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“…2). A similar level was found ii; [5]. I n Section 4 it will follow from reasons discussed there that this level is assumed to be acceptor-type.…”

Section: Defect Levelssupporting

confidence: 52%

Section: Discussionmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thermally induced defects in n-type and p-type silicon

Leskoschek¹,

Feichtinger²,

Vidrich³

1973

Phys. Stat. Sol. (a)

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“…Experimental data taken from Ref. [40](squares) and [32](diamonds): the data were obtained by comparing µ d and µ H of similar samples and an uncertainty of around ±15% was estimated. [41] change in slope between 250 K and 400 K: at high temperatures, the theoretical drift mobility is proportional to ∼ T −2.95 whereas at low temperatures it is proportional to ∼ T −1.70 .…”

mentioning

confidence: 99%

Magnetotransport phenomena in p -doped diamond from first principles

Macheda

Bonini

2018

Phys. Rev. B

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We present a first-principles study of the magneto-transport phenomena in p-doped diamond via the exact solution of the linearized Boltzmann transport equation, in which the materials' parameters, including electron-phonon and phonon-phonon interactions, are obtained from density functional theory. This approach gives results in very good agreement with experimental data for Hall and drift mobilities, low-and high-field magnetoresistance and Seebeck coefficient, including the phonon drag effect, in a range of temperatures and carrier concentrations. In particular, our results provide a detailed characterisation of the exceptionally high values for mobility and Seebeck coefficient, and predict a large magnetic-field driven enhancement of the Seebeck coefficient, of up to 30% in a magnetic field of 40 kOe already at room temperature.

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