n‐type and p‐type silicon crystals were quenched from 900 to 1400 °C into a cooling liquid. From Hall coefficient and conductivity measurements a model was deduced, in which the changed electrical properties of the quenched samples are caused by an additional shallow donor and a more complex type of defect which acts – depending on Fermi level – as an acceptor or donor, respectively. An energy level nearer than 0.07 eV to the bottom of the conduction band was estimated for the shallow donor whereas an acceptor level EA = EC − 0.32 eV and a donor level ED = EV + 0.40 eV are connected to the more complicated defect. A migration energy of about 1 eV is ascribed mainly to the shallow donor, which seems also to be responsible for a distinct maximum of defect generation at 1110 °C quenching temperature. According to the given model a dependence of quenched‐in defects on the initial doping does not appear to be very important up to net acceptor or donor densities of about 5 × 1015 cm−3.
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