Diameter-dependent optical losses in pillar microcavities

Tezuka, Tsutomu; Nunoue, Shinya

doi:10.1063/1.361283

Cited by 8 publications

(3 citation statements)

References 13 publications

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“…For the FM of the 1 µm pillar at 2.965 eV, an FWHM of 12.5 meV and, thus, a Q factor of 240 can be determined which is comparable to the value measured for the planar structure. For an 800 nm pillar, a slight decrease of Q is obtained, demonstrating that residual sidewall roughness becomes more important for small pillars 39, 40, 54–57. The influence of conicity of the pillar on the Q factor cannot be completely disregarded, as theoretical calculations have shown 58, 59.…”

Section: Resultsmentioning

confidence: 99%

“…Nowadays there are two principles of generating MCs with three‐dimensional optical confinement, namely top–down‐structuring via etching from planar MC samples 33, 39–45, or bottom‐up by self‐assembled growth of heterostructures on the nanoscale 46–50. As the latter approach is still under development, no successful cavity structures produced that way have been presented so far.…”

Section: Focused Ion Beam Millingmentioning

confidence: 99%

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Microphotoluminescence studies on GaN‐based airpost pillar microcavities containing InGaN quantum wells and quantum dots

Sebald¹,

Lohmeyer²,

Kalden³

et al. 2011

Physica Status Solidi (b)

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We report on the optical properties of monolithic GaN-based airpost pillar microcavities (MCs) with embedded InGaN quantum wells or quantum dots (QDs), respectively. The presented MCs are designed by use of different kinds of distributed Bragg reflectors consisting of either AlGaN/GaN, AlInN/GaN, or superlattices of AlN/InGaN and GaN. A quality factor of up to Q ¼ 260 has been achieved. Airpost pillar MCs, providing a three-dimensional optical confinement, are realized by focused ion beam etching starting from an all-epitaxially grown vertical-cavity surface-emitting laser structure. Pillar diameters below 1 mm are well controllable. The sidewalls are smooth and show a damaged surface layer of a thickness less than 2 nm only. Microphotoluminescence (m-PL) measurements reveal the longitudinal and transversal mode spectra of the cavities in good agreement with theoretical calculations based on a vectorial transfer-matrix method. Furthermore, the spectra of the QD based samples reveal distinct spectrally sharp emission lines around 2.73 eV which can be attributed to the emission of single-InGaN QDs and traced up to 120 K.Scanning electron micrograph of a GaN-based airpost pillar superimposed by the m-PL spectrum of a pillar with a diameter of d ¼ 1.8 mm. The measurement performed at T ¼ 150 K reveals the discrete resonator modes.

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Section: Resultsmentioning

confidence: 99%

Section: Focused Ion Beam Millingmentioning

confidence: 99%

Microphotoluminescence studies on GaN‐based airpost pillar microcavities containing InGaN quantum wells and quantum dots

Sebald¹,

Lohmeyer²,

Kalden³

et al. 2011

Physica Status Solidi (b)

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“…Studies have shown that refractive index perturbations can lead to scattering, increasing cavity loss rates and impacting the spatial emission profile of excited atoms within a cavity [21]. The influence of sidewall roughness on optical losses has been demonstrated, reducing scattering effects as a critical factor in achieving high-quality optical structures [22,23]. In p-type silicon substrates, the optical losses in a waveguide are due to free carrier absorption more than surface scattering losses or volume scattering [24].…”

Section: Introductionmentioning

confidence: 99%

Theoretical and Experimental Study of Optical Losses in a Periodic/Quasiperiodic Structure Based on Porous Si-SiO2

Jiménez-Vivanco,

Herrera,

Martínez

et al. 2023

Photonics

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This study investigates the reduction of optical losses in periodic/quasiperiodic structures made of porous Si-SiO2 through a dry oxidation process. Due to their unique optical properties, these structures hold great promise for various optoelectronic applications. By carefully engineering the composition and geometry of the structures, we fabricate periodic/quasiperiodic structures on a quartz substrate using an electrochemical anodization technique and subsequently subject them to dry oxidation at two different temperatures. The structure exhibits two localized modes in the transmission and reflection spectra. Unoxidized and oxidized structures’ complex refractive index and filling factors are determined theoretically and experimentally. Optical characterization reveals that the porous Si-SiO2 structures exhibit lower absorption losses and improved transmission than the pure porous silicon structures. Additionally, scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS) confirm the presence of porous Si-SiO2 and reduced silicon content. Our study demonstrates that dry oxidation effectively decreases Rayleigh scattering losses, leading to enhanced optical performance and potential applications in efficient optoelectronic devices and systems based on silicon. For instance, periodic/quasiperiodic structures could soon be used as light-emitting devices inside the field of optoelectronics, adding photoluminescent nanoparticles to activate the localized modes.

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Semiconductor microcavities, quantum boxes and the Purcell effect

Gérard

Gayral

Confined Photon Systems

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Diameter-dependent optical losses in pillar microcavities

Cited by 8 publications

References 13 publications

Microphotoluminescence studies on GaN‐based airpost pillar microcavities containing InGaN quantum wells and quantum dots

Microphotoluminescence studies on GaN‐based airpost pillar microcavities containing InGaN quantum wells and quantum dots

Theoretical and Experimental Study of Optical Losses in a Periodic/Quasiperiodic Structure Based on Porous Si-SiO2

Semiconductor microcavities, quantum boxes and the Purcell effect

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