Diagnostics of the hexagonal boron nitride interface layer by in situ FTIR reflection spectroscopy

Synthesis and formation mechanism of cubic boron nitride nanorods in lithium bromide molten salt

“…The weak absorption around 1106 cm À 1 can be attributed to the stretching TO mode of small amount of cBN, consistent with that in the literature [26] indicating the presence of cBN in the sample. Two strong absorption bands around 1383 and 802 cm À 1 were observed, which are close to the result of hBN [27]. The absorption band near 3415 cm À 1 can be attributed to the O-H bonds from the absorbed water.…”

Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors

“…Its first hints of existence comes as an intermediate phase between the cubic boron nitride (c-BN) and the substrate alongside turbostratic (t-BN) and amorphous boron nitride (a-BN) in the depositions of c-BN. [7][8][9][10] Subsequently, h-BN nanowalls (h-BNNWs), which have layers of h-BN vertically aligned to the substrate surface with voids between each "walls", have been reported. 11,12 One of current methods for depositing vertically aligned h-BN films is plasma-enhanced chemical vapour deposition (PECVD).…”