Diagnostic and analytical study on a low-pressure limit of diamond chemical vapor deposition in inductively coupled CO–CH4–H2 plasmas

Teii, Kungen; Hori, Masaru; Goto, Toshio

doi:10.1063/1.1686900

Cited by 14 publications

(5 citation statements)

References 31 publications

(27 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As far as feed gas composition is concerned, diamond deposition plasma may be processed in a number of ways. Although a large number of compounds have been tested as carbon sources [2,[22][23][24][25][26][27][28][29][30][31][32], methane is certainly the most used carbon containing species in diamond deposition processes. As a matter of fact, polycrystalline (PCD) and mono-crystalline (MCD) diamond layers can be readily deposited using MW discharges in hydrogen-methane mixtures with a methane content in the range 1-10% [33,34].…”

Section: Introductionmentioning

confidence: 99%

Modelling of diamond deposition microwave cavity generated plasmas

Hassouni¹,

Silva²,

Gicquel³

2010

J. Phys. D: Appl. Phys.

112

View full text Add to dashboard Cite

Some aspects of the numerical modelling of diamond deposition plasmas generated using microwave cavity systems are discussed. The paper mainly focuses on those models that allow (i) designing microwave cavities in order to optimize the power deposition in the discharge and (ii) estimating the detailed plasma composition in the vicinity of the substrate surface. The development of hydrogen plasma models that may be used for the self-consistent simulation of microwave cavity discharge is first discussed. The use of these models for determining the plasma configuration, composition and temperature is illustrated. Examples showing how to use these models in order to optimize the cavity structure and to obtain stable process operations are also given. A transport model for the highly reactive H2/CH4 moderate pressure discharges is then presented. This model makes possible the determination of the time variation of plasma composition and temperature on a one-dimensional domain located on the plasma axis. The use of this model to analyse the transport phenomena and the chemical process in diamond deposition plasmas is illustrated. The model is also utilized to analyse pulsed mode discharges and the benefit they can bring as far as diamond growth rate and quality enhancement are concerned. We, in particular, show how the model can be employed to optimize the pulse waveform in order to improve the deposition process. Illustrations on how the model can give estimates of the species density at the growing substrate surface over a wide domain of deposition conditions are also given. This brings us to discuss the implication of the model prediction in terms of diamond growth rate and quality.

show abstract

Section: Introductionmentioning

confidence: 99%

Modelling of diamond deposition microwave cavity generated plasmas

Hassouni¹,

Silva²,

Gicquel³

2010

J. Phys. D: Appl. Phys.

112

View full text Add to dashboard Cite

show abstract

“…20 The F-terminated cBN surfaces are highly resistive to abstraction reactions by gaseous F atoms and favorably stabilized with sp 3 configuration, while they are unfavorably too stable to produce available growth sites for subsequent adsorption of nitrogen-containing growth species. 24 Despite the use of ultralow ion energies of a few eV or less, cBN films exhibited granular growth with grain diameters of several nanometers, which is in contrast to columnar growth with column lengths up to micrometers in an arc plasma jet with BF 3 . 20 Impinging ions with kinetic energies higher than the B-F bond energy can play the role in removing the blocking F effectively.…”

Section: Discussionmentioning

confidence: 99%

Synthesis of cubic boron nitride films with mean ion energies of a few eV

Teii

Yamao

Yamamura

et al. 2007

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Articles you may be interested inSynthesis of cubic boron nitride films on Si tips via chemical vapor deposition and the field emission properties J. Vac. Sci. Technol. B 32, 02B102 (2014); 10.1116/1.4843075Quantitative study of ion bombardment induced phase transformation of cubic boron nitride by reflective electron energy-loss spectroscopy Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride films J.The lowest threshold energy of ion bombardment for cubic boron nitride ͑cBN͒ film deposition is presented. cBN films are prepared on positively biased Si ͑100͒ substrates from boron trifluoride ͑BF 3 ͒ gas in the high-density source region of an inductively coupled plasma with mean ion impact energies from 45 down to a few eV or less. The great decrease in the threshold ion energy is mainly attributed to specific chemical effects of fluorine as well as high ion-to-boron flux ratios. The results show evidence for the existence of a way to deposit cBN films through quasistatic chemical processes under ultralow-energy ion impact.

show abstract

“…1 [71] are given together by plots. The net growth was actually observed for [H] ≥ 6 × 10 12 cm −3 (above 10 mTorr) in a high-density plasma, while it was difficult to obtain a measurable growth rate in a low-density plasma [71]. For net growth, the value of k i [H] must be larger than that of k d .…”

Section: Diamond Deposition With Low-energy Ion Bombardmentmentioning

confidence: 99%

Plasma Deposition of Diamond at Low Pressures: A Review

Teii

2014

IEEE Trans. Plasma Sci.

Self Cite

View full text Add to dashboard Cite

Plasma deposition techniques of nanocrystalline and microcrystalline diamond and related mechanisms at pressures below 0.1 torr are reviewed. The mechanism of nucleation and growth of diamond in low-pressure conditions is discussed theoretically and experimentally along with the role of radicals and ions in two different ion-energy ranges. For ion impact energies below 20-30 eV, diamond deposition occurs on a surface. The growth process is limited by the substrate temperature and the flux of hydrogen radicals when the ion energy is reduced enough to several eV as shown by a kinetic rate analysis for radical species. The nucleation process is limited mainly by the degree of carbon saturation and, hence, the flux of carboncontaining species. For ion impact energies above 20-30 eV, diamond deposition occurs beneath a surface. Renucleation hinders the growth and diamond nanocrystals are embedded in an amorphous carbon matrix. The nucleation process depends strongly upon the ion energy, ion-to-depositing flux ratio, and substrate temperature as shown by the film density increment based on the subplantation model.Index Terms-Amorphous carbon, chemical vapor deposition (CVD), diamond-like carbon (DLC), epitaxy, hydrogen, ion bombardment, nanocrystalline diamond, nanodiamond, physical vapor deposition (PVD), plasma diagnostics, subplantation. 0093-3813

show abstract

Diagnostic and analytical study on a low-pressure limit of diamond chemical vapor deposition in inductively coupled CO–CH4–H2 plasmas

Cited by 14 publications

References 31 publications

Modelling of diamond deposition microwave cavity generated plasmas

Modelling of diamond deposition microwave cavity generated plasmas

Synthesis of cubic boron nitride films with mean ion energies of a few eV

Plasma Deposition of Diamond at Low Pressures: A Review

Contact Info

Product

Resources

About