Diagnosis of radio-frequency silane and silane-nitrogen plasmas based on field ionization mass spectrometry

Okuyama, F.; Hayashi, Hiromi; Iwai, Hiromasa

doi:10.1016/0039-6028(91)90444-w

Cited by 4 publications

(3 citation statements)

References 9 publications

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“…They applied this technique to the analysis of radio frequency silane and silane/nitrogen plasmas. 462 SiH 3 • was also suggested as the dominant SiH n • monosilicon radical species and responsible for the growth of amorphous Si:H films. The silane plasma was shown to contain Si 2 H n • radicals, presumably resulting from chemical reactions of atomic hydrogen present in the plasma with film surfaces.…”

Section: A Gas-phase Reactivitymentioning

confidence: 97%

“…Hayashi and co-workers 461 coupled a radio frequency plasma chamber to a field ionization mass spectrometer for the purpose of detecting neutral species generated in discharge plasmas. They applied this technique to the analysis of radio frequency silane and silane/nitrogen plasmas . SiH 3 • was also suggested as the dominant SiH n • monosilicon radical species and responsible for the growth of amorphous Si:H films.…”

Section: B− Plasma and Flame Analysis1 Plasma Analysismentioning

confidence: 99%

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Mass Spectrometry of Free Radicals

Sablier

Fujii

2002

Chem. Rev.

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Section: A Gas-phase Reactivitymentioning

confidence: 97%

Section: B− Plasma and Flame Analysis1 Plasma Analysismentioning

confidence: 99%

Mass Spectrometry of Free Radicals

Sablier

Fujii

2002

Chem. Rev.

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“…In the field of dry etching and plasma chemical vapor deposition (CVD) for a-Si:C deposition, plasma species have been investigated by emission spectroscopy, 18,19 absorption spectroscopy, 20,21 and mass spectrometry. [22][23][24] Emission and absorption spectroscopies detect only specific chemical species because the assignment of emission or absorption is very difficult without spectroscopic data. Investigation by in situ mass spectrometry is considered to be the most useful method to detect complex chemical species and investigate the reactions taking place in glow discharge plasmas containing large organic molecules.…”

mentioning

confidence: 99%

Preparation of Thin Cation-Exchange Membranes Using Glow Discharge Plasma Polymerization and Its Reactions

Uchimoto¹,

Endo²,

Yasuda³

et al. 2000

J. Electrochem. Soc.

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Thin cation-exchange films with fixed sulfonic acid groups were prepared by plasma polymerization followed by hydrolysis of sulfonyl halide groups using benzenesulfonyl fluoride and benzenesulfonyl chloride as starting materials. For benzenesulfonyl fluoride, sulfonyl fluoride groups were introduced into the plasma-formed polymers, whereas benzenesulfonyl chloride tended to decompose during plasma polymerization. The difference between the reaction in the glow discharge plasma of benzenesulfonyl fluoride and that of benzenesulfonyl chloride is discussed based on results obtained by in situ mass spectrometry and molecular orbital calculations. For benzenesulfonyl fluoride, the parent ion ([C 6 H 5 SO 2 F] ϩ• ) is the major species which introduces the sulfonic fluoride groups into the plasma polymer because S-F bond cleavage is difficult. However, the parent ion of benzenesulfonyl chloride is unstable in the glow discharge plasma, and cleavage of the S-Cl bond is facile and produces Cl radicals. The plasma polymer formed at 3.5 W using benzenesulfonyl fluoride exhibits a cation-exchange capacity of 1.3 mequiv g Ϫ1 after hydrolysis, which is comparable to the capacities of commercially available cation-exchange membranes.

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