2002
DOI: 10.1016/s0925-9635(02)00050-x
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Diagnosis of dielectric barrier discharge CH4 plasmas for diamond-like carbon film deposition

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Cited by 40 publications
(22 citation statements)
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“…Dangling bond sites may be produced during plasmasurface interactions via energetic ion bombardments. In our previous study, DBD CH 4 plasmas during diamond-like carbon film deposition have been characterized in-situ by means of the Langmuir double probe method [27]. The measured electron temperature changes from 3.0 to 5.8 eV, depending on the Pd value.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Dangling bond sites may be produced during plasmasurface interactions via energetic ion bombardments. In our previous study, DBD CH 4 plasmas during diamond-like carbon film deposition have been characterized in-situ by means of the Langmuir double probe method [27]. The measured electron temperature changes from 3.0 to 5.8 eV, depending on the Pd value.…”
Section: Discussionmentioning
confidence: 99%
“…It is generally assumed that the constant exposure to energetic ions typically leads to deposition of more brittle FC films with crosslinked structure [22,24,25]. Decreasing deposition pressure may lead to a rapid increase in the breakdown voltage [27]. The higher breakdown voltage at smaller Pd-value corresponds to a large potential drop, and thus a stronger electrical field across the discharge gas spacing, which causes generation of more energetic ions.…”
Section: Discussionmentioning
confidence: 99%
“…[11][12][13]. In addition, the CH F 2 D-{ 2 P and CH D 2 R-{ 2 P bands are observed at 432 and 390 nm, respectively [11][12][13]. The emissions of the C 2 Swan system, transition F 3 P g -{ 3 P u , vibrant sequences Dm = À1, 0, +1 also appears around 560, 516 and 466 nm, respectively [14].…”
Section: Resultsmentioning
confidence: 92%
“…Namely, the reduction of mechanical properties corresponds to the decrease of the density. [11][12][13]. In addition, the CH F 2 D-{ 2 P and CH D 2 R-{ 2 P bands are observed at 432 and 390 nm, respectively [11][12][13].…”
Section: Resultsmentioning
confidence: 94%
“…The hardness and the content of sp 3 hybridization bonds of a-C:H film deposited in CH 4 plasma were explained by the contribution of ion bombardment [6,7]. In the present work, we investigated a-C:H film deposition in Ar/CH 4 gas dielectric barrier discharge (DBD).…”
Section: Introductionmentioning
confidence: 99%