Diagnose of radiation induced single event effects in a PLL using a heavy ion microbeam

Sondon, Santiago; Falcón, Alfredo; Mandolesi, Pablo S.; Julián, P.; Vega, Nahuel; Nesprías, F.; Davidson, J.; Palumbo, F.; Debray, M. E.

doi:10.1109/latw.2013.6562682

Cited by 7 publications

(3 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, extremely low heavy ion beam currents down to hundred ions/s can be accurately controlled, allowing to perform SEE studies in electronic devices. For further detail regarding the facility, the reader is referred to previous work by the group [26], [27].…”

Section: Methodsmentioning

confidence: 99%

Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

Fontana

Pazos

Aguirre

et al. 2019

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

In this work, charge sharing effects on Analog Single Event Transients are experimentally observed in a fully-custom designed, 180nm CMOS Operational Amplifier by means of a heavy-ion microbeam. Sensitive nodes of the differential stage showed bipolar output transients that cannot be explained by single node collection for the closed loop characteristics of the circuit under test. Layout of these transistors are consistent with charge sharing effects due to deposited charge diffusion. Implementation of linear modeling and simulations of multiple node collection between paired transistors of the input stage showed great coincidence with the obtained experimental waveforms, shaped as bipolar, quenched pulses. These effects are also observed due to dummy transistors placed in the layout.A simple parametrization at the simulation level is proposed to reproduce the observed experimental waveforms. Results indicate that charge-sharing effects should be taken into account during simulation-based sensitivity evaluation of analog circuits, as pulse quenching can alter the obtained results, and linear modeling is a simple approach to emulate simultaneous charge collection in multiple nodes by applying superposition principles, with aims of hardening a design.

show abstract

Section: Methodsmentioning

confidence: 99%

Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

Fontana

Pazos

Aguirre

et al. 2019

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…It was originally set up for micro-PIXE (micro-particle induced X-Ray emission) [1][2][3] elemental analysis and micromachining [4,5]. Recently, it was employed in SEE (single event effects) testing, IBIC/TRIBIC (ion beam induced charge/time-resolved IBIC) measurements and total dose studies of semiconductors [6]. These applications require very low beam currents, ranging from few tens to few thousands of particles per second, corresponding to less than 10 5 times smaller than the usual micro-PIXE intensity (10-100 pA).…”

Section: Introductionmentioning

confidence: 99%

Experimental Setup of the Fast Current Controller for the Buenos Aires Heavy Ion Microbeam

Vega

Müller

Fournière

et al. 2019

QuBS

View full text Add to dashboard Cite

Recently we used the heavy ion microprobe of the Buenos Aires TANDAR Laboratory for Single Event Effects (SEE) and Total Dose (TD) experiments in electronics devices and components, requiring very low beam currents. The facility includes a fast beam switch that allows the control of the ion beam current and a mobile Si PIN (p-type, intrinsic, n-type) diode that directly measures the number of ions hitting the device. The fast beam deflector was used to reduce the current by producing a pulsed beam or generating a quasi-continuous (Poisson-like distributed) beam with currents ranging from tens to hundreds of ions/s. As an application for this current control method we present a single event effect (SEE) pulses map generated by a 32S8+ beam at 75 MeV on two 0.5 µm technology CMOS digital output buffers where the device was formed by cascading four CMOS inverters with increasing sizes from input to output to drive large loads. Using the same concept of pulse width modulated deflection, we developed a novel gradient scanning method. This system allows to produce in a single irradiation a distribution with a cumulative damage with a difference of two orders of magnitude at constant gradient. To demonstrate the method, we irradiated a lithium niobate monocrystal with 32S8+ beam at 75 MeV energy and later analyzed the produced damage by the micro-Raman technique and an optical profilometer.

show abstract

“…The drawback of this technique lies in the requirement for a heavy ion particle accelerator to produce the initial broad beam of heavy ion. Also, as the microbeam injects heavy ion in a small localized area, the deposited dose has to be carefully monitored [90] Absorption (TPA). SPA will be reviewed in detail while TPA will be briefly discussed.…”

Section: Limitations In Current See Test Standard (Effects Of Ageing)mentioning

confidence: 99%

Pulsed laser scan methodology for single event effect (SEE) qualification

Chua¹

View full text Add to dashboard Cite

This thesis addresses the need for alternative methods of single event effect (SEE) radiation testing in a period when microelectronic technology nodes are scaling to ever smaller dimensions. This results in increasingly complex devices and compels radiation test engineers to demand radiation test techniques which are capable of providing more information (both spatially and temporally) as compared to conventional broad beam heavy ion radiation test. Moreover, reliability and lifetime of advanced microelectronic devices are getting lower and thus, this thesis aims to study the influence of device ageing on its SEE radiation response. These issues are further complicated by demands As with every other exhilarating journey, mine started with an utterly unforeseen and casual conversation with a recognizable yet remote acquaintance. Such was the first day when I met up with my PhD supervisor, Prof Gan Chee Lip, in his office at Research Techno Plaza, Nanyang Technological University. Then, equipped with biomaterials knowledge and experience bequeathed through targeted modules from the School of Materials Science and Engineering, I was euphorically and fearlessly determined to engage in research for the betterment of mankind. Never did I envisage myself to be enchanted by the splendor of establishing radiation test methods to serve the community in Singapore; a decision that on hindsight, made impeccable sense and alignment with my core beliefs. At that time, this research domain was in its nascence in Singapore. The nation had just launched its first satellite a year ago while still trying to grapple with the uncertainties and challenges that gyrate around space research. Vast amount of knowledge and expertise had to be sought overseas; a blessing in which Dr Philippe Perdu from CNES France, was pivotal. My domain switch from biomaterials to microelectronics and space radiation would not have been possible without encouraging words, brilliant ideas, helping hands, generous sharing, sincere guidance, intense debates and discussions with many people along the way. Here forth, I would like to extend my heartfelt appreciation to these giants, whom one way or another, bigheartedly allowed me to look at this world, on top of their shoulders. Firstly, I would like to express my utmost gratitude towards Prof Gan Chee Lip for giving me the opportunity to be involved in such an ambitious and meaningful project. The road had been littered with steep learning curves, aggressive drafting of project and funding proposals, colossal amount of discussions with collaborators and numerous equipment to be purchased, set up and calibrated. He had provided me with the role model for scientific research, project management, student mentoring, collaborative engagements with both academia and industrial, conference organization and effective communication. He had given me plenty of room to grow, freedom to test ideas and conduct experiments, countless opportunities to participate in technical conferences and plentiful chances to exhibit our ...

show abstract

Diagnose of radiation induced single event effects in a PLL using a heavy ion microbeam

Cited by 7 publications

References 19 publications

Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

Experimental Setup of the Fast Current Controller for the Buenos Aires Heavy Ion Microbeam

Pulsed laser scan methodology for single event effect (SEE) qualification

Contact Info

Product

Resources

About