DFT study on the controllable electronic and optical properties of GaSb/InAs heterostructure

Zhang, Xiao; Yang, Minjie; Chen, Li; Zhou, Xiaolong

doi:10.1557/s43578-021-00116-6

Search citation statements

Order By: Relevance

Paper Sections

Select...

Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

2024

Publication Types

Select...

Article2

Book1

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

(1 citation statement)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The same phenomenon has also been observed in previous studies. 53 For the subsequent better study of the optoelectronic characteristics of the SnSe 2 /GaP heterostructure, we chose d = 3.75 Å as the object of the study.…”

Section: Resultsmentioning

confidence: 99%

Theoretical design of a photodetector based on a two-dimensional SnSe₂/GaP type-II heterostructure

et al. 2023

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 99%

Theoretical design of a photodetector based on a two-dimensional SnSe₂/GaP type-II heterostructure

et al. 2023

View full text Add to dashboard Cite

show abstract

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

Cheng,

Meng,

Luo

et al. 2024

Small

View full text Add to dashboard Cite

The strategic integration of low‐dimensional InAs‐based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs‐based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single‐atomic‐layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs‐based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs‐based materials and the working principles of InAs‐based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs‐based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi‐functional applications, and incorporating deep learning into first‐principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.

show abstract

2D III-V semiconductors

Mirzakuchaki,

Nazary

2023

Non-Layered 2D Materials

View full text Add to dashboard Cite

DFT study on the controllable electronic and optical properties of GaSb/InAs heterostructure

Cited by 3 publications

References 50 publications

Theoretical design of a photodetector based on a two-dimensional SnSe₂/GaP type-II heterostructure

Theoretical design of a photodetector based on a two-dimensional SnSe₂/GaP type-II heterostructure

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

2D III-V semiconductors

Contact Info

Product

Resources

About

DFT study on the controllable electronic and optical properties of GaSb/InAs heterostructure

Cited by 3 publications

References 50 publications

Theoretical design of a photodetector based on a two-dimensional SnSe2/GaP type-II heterostructure

Theoretical design of a photodetector based on a two-dimensional SnSe2/GaP type-II heterostructure

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

2D III-V semiconductors

Contact Info

Product

Resources

About

Theoretical design of a photodetector based on a two-dimensional SnSe₂/GaP type-II heterostructure

Theoretical design of a photodetector based on a two-dimensional SnSe₂/GaP type-II heterostructure