Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs

Kabir, Muhammad Salahuddin; Chowdhury, Rahnuma Rifat; Manley, Robert G.; Hirschman, K.D.

doi:10.1149/09204.0143ecst

Cited by 5 publications

(3 citation statements)

References 4 publications

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“…The working metal was molybdenum for the gate electrode and source/drain contacts. A passivation anneal was done and a capping layer was added to promote electrical stability; full process details are provided in a previous report (5). Devices were tested using a Lakeshore probe station with a liquid helium cryostat, with transfer characteristic measurements taken from RT to 40 K. The gate bias was swept from -5 to 10 V in 0.1 V increments at select drain voltages (0.1, 1.0, 10 V).…”

Section: Methodsmentioning

confidence: 99%

Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs

Kabir¹,

Powell²,

Manley³

et al. 2022

ECS Trans.

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There is wide variation in the interpretation of the interaction and/or independence of channel mobility and charge trapping in IGZO TFTs. Electrical measurements reveal temperature-dependent behavior that is not explained by existing TCAD models employed for defect states and carrier mobility. An IGZO TFT device model has been recently developed using Silvaco Atlas, which accounts for the role of donor-like oxygen vacancy defects, acceptor-like BTS, and acceptor-like interface traps, thus properly regulating the amount of free channel charge. The channel mobility is defined as only a function of temperature, and reflects a thermally-activated diffusive mobility with a distinct activation energy Ea = 40 meV. This thermally activated process is clearly intrinsic, as it is constant over all bias conditions and is not dependent on the steady-state trapped charge level. The model demonstrates a remarkable match to transfer characteristics measured at T = 150 K to room temperature.

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Section: Methodsmentioning

confidence: 99%

Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs

Kabir¹,

Powell²,

Manley³

et al. 2022

ECS Trans.

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“…ITGO devices were compared with IGZO devices with similar dimensions; W/L=24/12 µm, as shown in Figure 7. Process flow and fabrication details of the IGZO device can be found in (9). Note that the characteristic overlay required a 5 V offset for the ITGO device for a consistent subthreshold reference.…”

Section: Itgo Device Characteristicsmentioning

confidence: 99%

Process Development of Amorphous Indium Tin Gallium Oxide (ITGO) Thin Film Transistors

Powell¹,

Kabir²,

Zhu³

et al. 2022

ECS Trans.

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The focus of this study is an investigation on Indium-Tin-Gallium-Oxide (ITGO) TFTs. Unpassivated bottom-gate devices werefabricated with a sputter-deposited 30nm a-ITGO film with 1% and10% oxygen gas ambient, followed by a 1 or 2 hour anneal at 300oCin oxygen. Devices fabricated with PO2 = 1% resulted in a highlyconductive channel, whereas devices with PO2 = 10% displayedsemiconducting behavior and a shallow subthreshold. Followingaging in room ambient for multiple days, devices displayed left-shifted transfer characteristics with steep subthreshold. It ishypothesized that the unpassivated back-channel attains a morehomogeneous trap distribution. The ITGO devices demonstrate aneffective channel mobility approximately 2.5 times higher thanIGZO TFTs. Radial variation in device performance can beattributed to non-uniformities in the as-deposited ITGO film, with acorrelation to the distribution in optical constants across the wafer.

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“…In general, oxide semiconductor materials conventionally deposited using techniques such as sputtering [10], chemical vapor deposition [11], and sol-gel processes [12] in both research and practice. However, to enhance the performance of capabilities microelectronic components, the semiconductor industry requires the reduction of dimensions with high aspect ratios [13][14][15]. To meet these requirements, atomic layer deposition (ALD) has been proposed.…”

Section: Introductionmentioning

confidence: 99%

Wide process temperature of atomic layer deposition for In₂O₃ thin-film transistors using novel indium precursor (N,N′-di-tert butylacetimidamido)dimethyllindium

Lee,

Kang,

Yeon

et al. 2024

Nanotechnology

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This study introduces a novel heteroleptic indium complex, which incorporates an amidinate ligand, serving as a high-temperature atomic layer deposition (ALD) precursor. The most stable structure was determined using density functional theory and synthesized, demonstrating thermal stability up to 375 °C. We fabricated indium oxide thin-film transistors (In2O3 TFTs) prepared with DBADMI precursor using ALD in wide range of window processing temperature of 200 °C, 300 °C, and 350 °C with an ozone (O3) as the source. The growth per cycle of ALD ranged from 0.06 to 0.1 nm cycle−1 at different deposition temperatures. X-ray diffraction and transmission electron microscopy were employed to analyze the crystalline structure as it relates to the deposition temperature. At a relatively low deposition temperature of 200 °C, an amorphous morphology was observed, while at 300 °C and 350 °C, crystalline structures were evident. Additionally, x-ray photoelectron spectroscopy analysis was conducted to identify the In–O and OH-related products in the film. The OH-related product was found to be as low as 1% with an increase the deposition temperature. Furthermore, we evaluated In2O3 TFTs and observed an increase in field-effect mobility, with minimal change in the threshold voltage (V th), at 200 °C, 300 °C, and 350 °C. Consequently, the DBADMI precursor, given its stability at highdeposition temperatures, is ideal for producing high-quality films and stable crystalline phases, with wide processing temperature range makeing it suitable for various applications.

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Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs

Cited by 5 publications

References 4 publications

Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs

Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs

Process Development of Amorphous Indium Tin Gallium Oxide (ITGO) Thin Film Transistors

Wide process temperature of atomic layer deposition for In₂O₃ thin-film transistors using novel indium precursor (N,N′-di-tert butylacetimidamido)dimethyllindium

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Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs

Cited by 5 publications

References 4 publications

Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs

Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs

Process Development of Amorphous Indium Tin Gallium Oxide (ITGO) Thin Film Transistors

Wide process temperature of atomic layer deposition for In2O3 thin-film transistors using novel indium precursor (N,N′-di-tert butylacetimidamido)dimethyllindium

Contact Info

Product

Resources

About

Wide process temperature of atomic layer deposition for In₂O₃ thin-film transistors using novel indium precursor (N,N′-di-tert butylacetimidamido)dimethyllindium