Device simulation for RF applications

Dutton, R.W.; Troyanovsky, B.; Yu, Zhiping; Arnborg, T.; Rotella, F.M.; Ma, G.; Sato-Iwanaga, Junko

doi:10.1109/iedm.1997.650386

Cited by 25 publications

(18 citation statements)

References 4 publications

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“…For example, SEM photos can be used to extract geometry information. Inductance analysis tools such as FASTHENRY can in turn be used to extract package inductance [4].…”

Section: Discussionmentioning

confidence: 99%

Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction

Shen

Hsiau

et al. 1998

Simulation of Semiconductor Processes and Devices 1998

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A suite of software tools have been developed to model IC structures including interconnects based on layout design and processing information. The modeling capabilities include 3D rendering of solid objects, surface meshing, electrical parameter (mainly capacitance) extraction for arbitrarily shaped objects. This software ensemble provides a direct link between design parameters and electrical performance. Analysis of a four transistor SRAM cell is used as an example.

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“…For example, SEM photos can be used to extract geometry information. Inductance analysis tools such as FASTHENRY can in turn be used to extract package inductance [4].…”

Section: Discussionmentioning

confidence: 99%

Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction

Shen

Hsiau

et al. 1998

Simulation of Semiconductor Processes and Devices 1998

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“…The harmonic formulation, a widely used approach in the field of nonlinear microwave-circuit analysis, proves to be much faster and more stable than the traditional time-domain approach; moreover, a frequency-domain analysis of the passive elements becomes immediately available [6]. In a previous work [7], a similar harmonic approach has been applied to a drift-diffusion full-2D formulation for the two-tone analysis of MESFETs. Our quasi-2D approach improves the computing speed considerably while retaining a sufficient accuracy for component analysis, and the hydrodynamic formulation allows the inclusion of short-channel effects that play an important role especially at high frequencies.…”

Section: Introductionmentioning

confidence: 98%

Harmonic solution of semiconductor transport equations for microwave and millimetre-wave device modelling

Acciari

Leuzzi

Giannini

2003

Int J RF and Microwave Comp Aid Eng

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ABSTRACT:The hydrodynamic transport equations for charges in a semiconductor have been solved for a periodic excitation by means of a harmonic approach, in order to model microwave and millimetre-wave active devices. The solution is based on the expansion of physical variables in a Fourier series in the time domain, and on discretisation in the space domain. A waveform-balance technique in the TD is used to solve the nonlinear equations system. This approach allows for a longer time step with respect to standard TD solutions for most cases of interest, greatly reducing simulation time by at least two orders of magnitude in typical cases.

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“…This is due to the fact that the metrics used to characterize RF power amplifier performance are difficult to obtain through other methods. While it would be desirable to determine these metrics a priori through device simulations, the high-frequency, large-signal operation of these power amplifiers often require impractically long simulation times, if convergence is achieved at all [1]. The other alternative would be to use circuit simulators, but the models used to represent the RF power devices are difficult to generate, and they are most often obtained through measurements of actual devices using equipment such as the Agilent Pulsed Modeling System.…”

Section: Introductionmentioning

confidence: 99%

A New Methodology for Efficient and Reliable Large- Signal Analysis of RF Power Devices

Ito

Tornblad²,

Ma³

et al. 2004

Simulation of Semiconductor Processes and Devices 2004

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In RF power device design, much of the analysis is based on measurements. Complete analysis by simulation is often avoided because the high-frequency, largesignal operation makes device simulation unsuitable, and the difficulties in obtaining a good physical compact model make circuit simulation inaccurate. This work presents a methodology that overcomes these limitations by utilizing a combination of device and circuit simulations to characterize large-signal operation of RF power devices quickly and accurately. Results show that circuit simulations using an extracted Root model agree well with device simulation for the intrinsic device. It is also demonstrated that changes in device design are reflected in circuit-level RF performance.

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Device simulation for RF applications

Cited by 25 publications

References 4 publications

Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction

Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction

Harmonic solution of semiconductor transport equations for microwave and millimetre-wave device modelling

A New Methodology for Efficient and Reliable Large- Signal Analysis of RF Power Devices

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