Device processing and junction formation needs for ultra-high power Ga2O3 electronics

Ren, F.; Yang, Jiancheng; Fares, Chaker; Pearton, S. J.

doi:10.1557/mrc.2019.4

Cited by 25 publications

(14 citation statements)

References 80 publications

(151 reference statements)

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“…2C). The large deviation of the reported ϕ b JV values for the specific metal/β-Ga 2 O 3 junctions probably arises because of the differences in interface quality, e.g., a partial Fermi-level pinning at the surface that can occur ( 31 ), even when the same metal contacts are used. As measured by ultraviolet photoelectron spectroscopy (fig.…”

Section: Resultsmentioning

confidence: 98%

Electric dipole effect in PdCoO ₂ /β-Ga ₂ O ₃ Schottky diodes for high-temperature operation

2019

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High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.

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Section: Resultsmentioning

confidence: 98%

Electric dipole effect in PdCoO ₂ /β-Ga ₂ O ₃ Schottky diodes for high-temperature operation

2019

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“…Beta‐gallium oxide ( β ‐Ga 2 O 3 ), due to its interesting optical and electrical properties such as ultra‐wide energy gap of ≈4.8 eV, high transparency in visible light (VIS) region, and a high value of the critical electric field ≈8 MV cm −1 , [ 1–3 ] is especially suitable for applications in high‐power and high‐temperature electronics [ 4 ] as well as for detection of deep ultraviolet (UV) radiation. [ 5 ] Moreover, the availability of single crystal substrates with large diameters up to 4″ [ 6 ] and the possibility of growth of thick layers with a controlled doping level down to about [ 7 ] 1

\times

^{15}

^{- 3}

make this material especially attractive in terms of low cost and possible mass production.…”

Section: Introductionmentioning

confidence: 99%

All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga₂O₃ Schottky Diodes

Taube,

Borysiewicz,

Sadowski

et al. 2023

Physica Status Solidi (a)

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In this work the fabrication and characterization of low‐resistance all‐oxide transparent vertical β‐Ga2O3 diodes using indium tin oxide (ITO) and aluminium‐doped zinc oxide (AZO) Schottky contacts is reported. It was shown that an ITO ohmic contact to n+‐β‐Ga2O3 substrate was formed after annealing in N2 at 800∘C C. Both AZO and ITO‐based Schottky diodes shows well behaved current‐voltage characteristics. Average Schottky barrier heights and ideality factors were 0.99 eV and 1.05 and 0.95 eV and 1.03 for AZO and ITO Schottky contacts, respectively. The on‐off current ratio was about 2×1010 and 1×1011 for AZO and ITO Schottky contact, respectively. Moreover, the on‐state resistance was about 6‐7 mΩcm2 and 4‐5 mΩcm2 for AZO and ITO Schottky contact, respectively, and was 20‐35 times lower than for previously reported transparent β‐Ga2O3 Schottky diodes.This article is protected by copyright. All rights reserved.

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“…cation densities, providing high-quality epitaxial layers [10,11]. Recently, β-Ga2O3 power devices have been demonstrated with encouraging performance such as high breakdown voltages, high critical electric fields, high currents, and excellent thermal stability [12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

Mudiyanselage

Wang

2022

IEEE J. Electron Devices Soc.

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Breakdown capability of β-Ga2O3/GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With 5 μm β-Ga2O3 drift layer, the ideal breakdown voltage (BV) of the heterojunction was 1.37 kV, while the BV of the reference device without effective mesa edge termination decreased dramatically to 300 V due to the electric field crowding at the device edge. Four mesa ET structures were investigated to mitigate the electric field crowding at the junction edge, including beveled mesa, step mesa, deeply etched mesa, and p-doped guard ring. Without effective ET, the peak electric field at the junction edge was ~ 4.2 MV/cm at −300 V. By incorporating these ET techniques, the peak electric fields were reduced significantly to 0.73 MV/cm. Ideal BV of 1.37 kV was achievable using deeply etched mesa and guard ring ETs. The beveled mesa realized >80% of the ideal BV, while step mesa ET was less effective in alleviating the electric field crowding and only offered ~ 40% of the ideal BV. The device BV can be further scaled by varying β-Ga2O3 drift layer thickness. This work can serve as an important reference and guideline for developing high power high voltage β-Ga2O3 based bipolar power devices.

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Device processing and junction formation needs for ultra-high power Ga2O3 electronics

Abstract: Abstract

Cited by 25 publications

References 80 publications

Electric dipole effect in PdCoO ₂ /β-Ga ₂ O ₃ Schottky diodes for high-temperature operation

Electric dipole effect in PdCoO ₂ /β-Ga ₂ O ₃ Schottky diodes for high-temperature operation

All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga₂O₃ Schottky Diodes

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

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Device processing and junction formation needs for ultra-high power Ga2O3 electronics

Abstract: Abstract

Cited by 25 publications

References 80 publications

Electric dipole effect in PdCoO 2 /β-Ga 2 O 3 Schottky diodes for high-temperature operation

Electric dipole effect in PdCoO 2 /β-Ga 2 O 3 Schottky diodes for high-temperature operation

All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga2O3 Schottky Diodes

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

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Product

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Electric dipole effect in PdCoO ₂ /β-Ga ₂ O ₃ Schottky diodes for high-temperature operation

Electric dipole effect in PdCoO ₂ /β-Ga ₂ O ₃ Schottky diodes for high-temperature operation

All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga₂O₃ Schottky Diodes