All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga₂O₃ Schottky Diodes

Abstract

In this work the fabrication and characterization of low‐resistance all‐oxide transparent vertical β‐Ga2O3 diodes using indium tin oxide (ITO) and aluminium‐doped zinc oxide (AZO) Schottky contacts is reported. It was shown that an ITO ohmic contact to n+‐β‐Ga2O3 substrate was formed after annealing in N2 at 800∘C C. Both AZO and ITO‐based Schottky diodes shows well behaved current‐voltage characteristics. Average Schottky barrier heights and ideality factors were 0.99 eV and 1.05 and 0.95 eV and 1.03 for AZO and ITO Schottky contacts, respectively. The on‐off current ratio was about 2×1010 and 1×1011 for AZO and ITO Schottky contact, respectively. Moreover, the on‐state resistance was about 6‐7 mΩcm2 and 4‐5 mΩcm2 for AZO and ITO Schottky contact, respectively, and was 20‐35 times lower than for previously reported transparent β‐Ga2O3 Schottky diodes.This article is protected by copyright. All rights reserved.