“…For the device optimization, all the requisite device parameters and defect parameters for simulation work have been adopted (Tables S1-S4, Supporting Information) from existing literature for each layer as follows FTO, [19][20][21][22] GO, [23,24] Cs 2 SnI 6 , [25,26] Spiro-OMeTAD, [27][28][29][30] CuSCN, [31,32] PTAA, [33,34] PEDOT:PSS, [35,36] NiO, [37,38] CuO, [39,40] CuI, [41,42] CuSbS 2 , [43][44][45][46] and Au (work function of 5.1 eV). [47]…”