Abstract:A new SONOS flash memory device with recess channel and side-gate was proposed and designed in terms of recess depth, doping profile, and side-gate length for sub-40 nm flash memory technology. The key features of the devices were characterized through 3-dimensional device simulation. This cell structure can store 2 or more bits of data in a cell when it is applied to NOR flash memory. It was shown that channel doping profile is very important depending on NOR or NAND applications. In NOR flash memory applicat… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.