Device characteristics of polymer dual-gate field-effect transistors

Maddalena, Francesco; Spijkman, Mark-Jan; Brondijk, J. J.; Fonteijn, P.; Brouwer, F.M.; Hummelen, Jan C.; Leeuw, Dago M. de; Blom, Paul W. M.; Boer, Bart de

doi:10.1016/j.orgel.2008.06.004

Cited by 59 publications

(57 citation statements)

References 20 publications

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“…8 The challenge for the realization of the Bio-FET is the attachment of the analyte receptor to the surface of the top insulator. For this purpose we functionalized the insulator with maleimide side-chains, that can chemically bind to thiol groups.…”

Section: Introductionmentioning

confidence: 99%

Organic field-effect transistor-based biosensors functionalized with protein receptors

Maddalena

Kuiper

Poolman

et al. 2010

Journal of Applied Physics

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An organic field-effect transistor with integrated proteins ͑Bio-FET͒ for sensing of sulfate ions is presented. A sulfate receptor was engineered to contain a thiol group for surface-anchoring without affecting its binding activity. The modified receptor was covalently coupled to a maleimide-functionalized polystyrene layer, and integrated as gate dielectric in a dual-gate transducer. The binding of sulfate ions in dry conditions was detected by a shift in the threshold voltage. Combined with surface density measurements by atomic force microscopy , an effective charge of −1.7q per protein was found, as expected from the Bio-FET operation model.

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Section: Introductionmentioning

confidence: 99%

Organic field-effect transistor-based biosensors functionalized with protein receptors

Maddalena

Kuiper

Poolman

et al. 2010

Journal of Applied Physics

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“…6 To improve the sensitivity beyond the Nernstian response, we changed the layout of the ISFET by adding a second gate. [7][8][9][10] A schematic layout of the resulting dual-gate transducer is shown in Fig. 1.…”

Section: Beyond the Nernst-limit With Dual-gate Zno Ion-sensitive Fiementioning

confidence: 99%

Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors

Spijkman¹,

Smits²,

Cillessen

et al. 2011

Applied Physics Letters

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118

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“…7,8 In order to address these conflicting observations, we study the charge transport properties of DPP-based ambipolar semiconducting polymers embedded in dual-gate field-effect transistors (DGFETs) comprising two separate dielectric/ semiconductor interfaces in a single transistor. 9,10 In fact, the DGFET structure is the best platform for studying the effects of different dielectrics upon device performance with minimal influence from external parameters, such as sample-to-sample variation, because the devices share an identical active semiconductor layer. 9,10 In the present work, we perform temperature-dependent transfer-curve measurements on the DGFETs in the range of 120-260 K. Based on these measurements, we analyze the spatial charge-transporting behavior of holes in the active DPP-based semiconducting layer interfacing with the organic top-gate (TG) and SiO 2 bottomgate (BG) dielectric layers.…”

mentioning

confidence: 99%

“…9,10 In fact, the DGFET structure is the best platform for studying the effects of different dielectrics upon device performance with minimal influence from external parameters, such as sample-to-sample variation, because the devices share an identical active semiconductor layer. 9,10 In the present work, we perform temperature-dependent transfer-curve measurements on the DGFETs in the range of 120-260 K. Based on these measurements, we analyze the spatial charge-transporting behavior of holes in the active DPP-based semiconducting layer interfacing with the organic top-gate (TG) and SiO 2 bottomgate (BG) dielectric layers. We also correlate key chargetransport parameters with the dielectric layers that we have studied.…”

mentioning

confidence: 99%

Dielectric interface-dependent spatial charge distribution in ambipolar polymer semiconductors embedded in dual-gate field-effect transistors

Lee

Roelofs

Janssen

et al. 2016

Applied Physics Letters

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The spatial charge distribution in diketopyrrolopyrrole-containing ambipolar polymeric semiconductors embedded in dual-gate field-effect transistors (DGFETs) was investigated. The DGFETs have identical active channel layers but two different channel/gate interfaces, with a CYTOP™ organic dielectric layer for the top-gate and an octadecyltrichlorosilane (ODTS) self-assembled monolayer-treated inorganic SiO2 dielectric for the bottom-gate, respectively. Temperature-dependent transfer measurements of the DGFETs were conducted to examine the charge transport at each interface. By fitting the temperature-dependent measurement results to the modified Vissenberg–Matters model, it can be inferred that the top-channel interfacing with the fluorinated organic dielectric layers has confined charge transport to two-dimensions, whereas the bottom-channel interfacing with the ODTS-treated SiO2 dielectric layers has three-dimensional charge transport.

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Device characteristics of polymer dual-gate field-effect transistors

Cited by 59 publications

References 20 publications

Organic field-effect transistor-based biosensors functionalized with protein receptors

Organic field-effect transistor-based biosensors functionalized with protein receptors

Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors

Dielectric interface-dependent spatial charge distribution in ambipolar polymer semiconductors embedded in dual-gate field-effect transistors

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