Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors

Spijkman, Mark-Jan; Smits, Edsger C. P.; Cillessen, J. F. M.; Biscarini, Fabio; Blom, Paul W. M.; Leeuw, Dago M. de

doi:10.1063/1.3546169

Cited by 118 publications

(77 citation statements)

References 12 publications

(12 reference statements)

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“…The theoretical work provides a unifying framework to interpret a broad range of experimental data reported in the literature. [6][7][8][9] Rather surprisingly and somewhat counter-intuitively, we find that if both signal and noise can be measured with infinite precision, the best pH-resolution achieved by a DGFET sensor is indistinguishable from that of a single-gated sensor. On the other hand, if the minimum detectable pH change is determined by the noise associated with inexpensive instrumentation-as sometimes is the case for commercial systems-DGFETs will offer better signal to noise ratio and improved pH-resolution compared to classical counterparts.…”

Section: Introductionmentioning

confidence: 92%

“…(3), and finally, (iv) the oxide-Si FET system described by Eqs. (4)- (8). The corresponding equations for noise are summarized in Table II, through Eqs.…”

Section: B Model Equationsmentioning

confidence: 99%

“…3) are consistent with the recent experimental studies 9 in which the fluid gate biases the channel to depletion regime, and the scaling of DV BG shows linearity with respect to t box , as previously reported in the literature. 8 Similarly, to explore the pH response of a device for a given geometry with variable FG-bias (second type of experiments reported in the literature 9 ), we solve the equations in Table I self consistently for different fluid gate biases (with parameters summarized in Table III), while keeping the BGbias large enough so that the bottom channel is in inversion. The result is an S-shaped response, plotted in Fig.…”

Section: B Numerical Model Of Dgfet Ph-sensorsmentioning

confidence: 99%

“…DGFET region (iv) bottom oxide-gate interface Wj BGÀbox ¼ V BG ðV BG : bottom gate biasÞ (8) device can be determined as an uncorrelated sum of the noises from top and bottom channels. This assumption will have to be revised for ultrathin body, fully depleted DGFET transistors.…”

Section: Signal and Noise In Fetsmentioning

confidence: 99%

“…5 The ease of use of these pH meters revolutionized the field; however, since both signal and noise are amplified simultaneously, the larger signal of a Beckman pH-meter did not translate to better pH resolution. More recently, a number of groups [6][7][8][9] have reported experimental observation of "super-Nernstian" amplification in a variety of systems, most notably in doublegated field-effect transistors or DGFETs. 10 However, the theory of pH sensitivity of these sensors as a function of device biasing configuration and device geometry remains poorly understood.…”

Section: Introductionmentioning

confidence: 99%

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Theory of signal and noise in double-gated nanoscale electronic pH sensors

Nair

Alam

2012

Journal of Applied Physics

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The maximum sensitivity of classical nanowire (NW)-based pH sensors is defined by the Nernst limit of 59 mV/pH. For typical noise levels in ultra-small single-gated nanowire sensors, the signal-to-noise ratio is often not sufficient to resolve pH changes necessary for a broad range of applications. Recently, a new class of double-gated devices was demonstrated to offer apparent "super-Nernstian" response (>59 mV/pH) by amplifying the original pH signal through innovative biasing schemes. However, the pH-sensitivity of these nanoscale devices as a function of biasing configurations, number of electrodes, and signal-to-noise ratio (SNR) remains poorly understood. Even the basic question such as "Do double-gated sensors actually resolve smaller changes in pH compared to conventional single-gated sensors in the presence of various sources of noise?" remains unanswered. In this article, we provide a comprehensive numerical and analytical theory of signal and noise of double-gated pH sensors to conclude that, while the theoretical lower limit of pH-resolution does not improve for double-gated sensors, this new class of sensors does improve the (instrument-limited) pH resolution. V C 2012 American Institute of Physics. [http://dx

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Section: Introductionmentioning

confidence: 92%

“…(3), and finally, (iv) the oxide-Si FET system described by Eqs. (4)- (8). The corresponding equations for noise are summarized in Table II, through Eqs.…”

Section: B Model Equationsmentioning

confidence: 99%

Section: B Numerical Model Of Dgfet Ph-sensorsmentioning

confidence: 99%

Section: Signal and Noise In Fetsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Theory of signal and noise in double-gated nanoscale electronic pH sensors

Nair

Alam

2012

Journal of Applied Physics

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Perspective of Printed Solid‐State Ion Sensors toward High Sensitivity and Selectivity

Bao

Kim

2020

Adv Eng Mater

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Ion‐selective field‐effect transistors (ISFETs) are integrated device systems with transistors and ion‐selective electrodes. The printed ISFET's sensing mechanisms are discussed. Then, different sensitive membranes linked with ISFETs are highlighted. To achieve high sensitivity and selectivity of ISFETs, various printing methods have been introduced recently. The real‐time monitoring sensing applications, such as ion detection in health, food safety, and environmental sectors, are discussed with the highlight on the biological applications for the cost‐efficient detection of DNA molecules. Finally, the challenges of the ISFETs are considered and illustrated with the proposed perspectives.

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Device Engineered Organic Transistors for Flexible Sensing Applications

et al. 2016

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Organic thin-film transistors (OFETs) represent a promising candidate for next-generation sensing applications because of the intrinsic advantages of organic semiconductors. The development of flexible sensing devices has received particular interest in the past few years. The recent efforts of developing OFETs for sensitive and specific flexible sensors are summarized from the standpoint of device engineering. The tuning of signal transduction and signal amplification are highlighted based on an overview of active-layer thickness modulation, functional receptor implantation and device geometry optimization.

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Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors

Abstract: Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors Spijkman, M.; Smits, E. C. P.; Cillessen, J. F. M.; Biscarini, F.; Blom, P. W. M.; de Leeuw, D. M.

Cited by 118 publications

References 12 publications

Theory of signal and noise in double-gated nanoscale electronic pH sensors

Theory of signal and noise in double-gated nanoscale electronic pH sensors

Perspective of Printed Solid‐State Ion Sensors toward High Sensitivity and Selectivity

Device Engineered Organic Transistors for Flexible Sensing Applications

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