Developments in the bulk growth of Cd1−xZnxTe for substrates

Sen, Sanghamitra; Stannard, John E.

doi:10.1016/0960-8974(94)90008-6

Cited by 34 publications

(12 citation statements)

References 36 publications

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“…In fact, the melt density is the same as that of solid, i.e. 5.68 g/cm 3 , given by reference [18]. Therefore, there is no gap between the crystal and the crucible.…”

Section: Governing Equations For Energy Transfermentioning

confidence: 93%

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Optimization of control parameters of cadmium zinc telluride Bridgman single crystal growth

Liu

Song

Zhang

et al. 2007

Cryst. Res. Technol.

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The temperature gradient within a furnace chamber and the crucible pull rate are the key control parameters for cadmium zinc telluride Bridgman single crystal growth. Their effects on the heat and mass transfer in front of the solid-liquid interface and the solute segregation in the grown crystal were investigated with numerical modeling. With an increase of the temperature gradient, the convection intensity in the melt in front of the solid-liquid interface increases almost proportionally to the temperature gradient. The interface concavity decreases rapidly at faster crucible pull rates, while it increases at slow pull rates. Moreover, the solute concentration gradient in the melt in front of the solid-liquid interface decreases significantly, as does the radial solute segregation in the grown crystal. In general, a decrease of the pull rate leads to a strong decrease of the concavity of the solid-liquid interface and of the radial solute segregation in the grown crystal, while the axial solute segregation in the grown crystal increases slightly. A combination of a low crucible pull rate with a medium temperature gradient within the furnace chamber will make the radial solute segregation of the grown crystal vanish.

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“…In fact, the melt density is the same as that of solid, i.e. 5.68 g/cm 3 , given by reference [18]. Therefore, there is no gap between the crystal and the crucible.…”

Section: Governing Equations For Energy Transfermentioning

confidence: 93%

“…Secondly, its thermal conductivity is so low that substantial concavity is almost always present in the entire crystal growth process. Finally and most important is that the solute zinc segregation coefficient is rather high, about 1.35 [1][2][3].…”

Section: Introductionmentioning

confidence: 98%

Optimization of control parameters of cadmium zinc telluride Bridgman single crystal growth

Liu

Song

Zhang

et al. 2007

Cryst. Res. Technol.

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“…Last, and most important, the solute segregation coefficient of zinc is rather high, reaching approximately 1.35. [1][2][3] Much effort and many attempts have been made to limit solute segregation to obtain high-quality Cd x Zn 1-x Te single crystals. Azoulay et al balanced the vapor partial pressure of the components with a Cd/Zn melt pour at 820-860°C to compensate for Zn depletion in the melt during solidification and, therefore, reduce axial and radial Zn segregation in the grown crystal.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Artificial Forced Cooling in the Bridgman Crystal Growth of Cadmium Zinc Telluride

Liu

Zhang

et al. 2007

Journal of Elec Materi

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The effects of artificial forced cooling on the solid-liquid interface and on solute segregation were investigated by modeling the vertical Bridgman method for the single-crystal growth of CdZnTe, taking into consideration effects such as increasing the axial outward heat flux from the crucible bottom, the radial outward heat flux from the crucible wall, and the carbon film thickness on the crucible inner wall. Axial artificially forced cooling noticeably increases convection and the temperature gradient in the melt next to the solid-liquid interface, and substantially reduces interface concavity at the initial solidification stage. Interface concavity increases a little when the solidification proceeds further, however. Axial artificially forced cooling reduces radial solute segregation of the initial segment of the grown crystal and slightly increases the solute iso-concentration segment. Radial artificially forced cooling enhances melt convection substantially, affects solid-liquid interface concavity only slightly, and hardly affects solute segregation in the grown crystal. Doubling the carbon film thickness weakens convection of the melt in front of the interface, substantially increases interface concavity, and hardly affects solute segregation in the grown crystal.

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“…In the 4% Zn range, it is used as a lattice matched substrate to HgCdTe near infrared detection device layers [1,2]. A lattice-matched substrate allows for preparation of strain free detector.…”

Section: Introductionmentioning

confidence: 99%

Growth of cadmium zinc telluride by liquid phase electroepitaxy

Armour¹,

Sheibani²,

Dost³

2006

Cryst. Res. Technol.

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This study was undertaken to examine the feasibility of growing CdZnTe by liquid phase electroepitaxy. Based on our successful LPEE system of GaInAs, a new crucible to grow CdZnTe was developed. The development presented numerous difficulties. The physical properties of CdZnTe make this material very difficult to grow. All components of the system were investigated. Electromigration of the solute across the solution carries species towards the growth interface. In liquid Cd-Zn-Te, the CdTe and ZnTe species remain associated, contrary to the GaInAs system. Experiments showed that LPEE growth of CdZnTe is possible and the electromigration mechanism functions well in the CdZnTe solution. Despite this, other problems remained with the new LPEE system. The preparation of the solution proved difficult without pressurizing the LPEE crucible. Control of the reaction required the use of pre-compounded CdTe and ZnTe. Proper control of the solution saturation is imperative to ensure minimal dissolution of the seed prior to growth initiation and a reasonable growth rate during growth. The solution remained an issue during the duration of growth due to the high vapor pressures of the constituents. Tellurium evaporation during growth could lower solution volume until electrical contact across the solution is broken. Careful preparation of appropriate solution volume was imperative for successful growth. In LPEE, a uniform electric current passage across the growth interface is necessary for uniform and stable growth interface. This requires the design of a uniform contact zone between the bottom graphite electrode and the seed crystal. The contact zone issue was not adequately resolved in this study. However, a number of successful growth runs were achieved despite the electrical contact problems. Results show that the LPEE of growth CdZnTe is feasible.

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Developments in the bulk growth of Cd1−xZnxTe for substrates

Cited by 34 publications

References 36 publications

Optimization of control parameters of cadmium zinc telluride Bridgman single crystal growth

Optimization of control parameters of cadmium zinc telluride Bridgman single crystal growth

Investigation of Artificial Forced Cooling in the Bridgman Crystal Growth of Cadmium Zinc Telluride

Growth of cadmium zinc telluride by liquid phase electroepitaxy

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