Development of Transition Metal Incorporated Bismuth‐Based Oxide Semiconductors as Potential Candidates for Solar Assisted Water Splitting Applications

Abstract

Photocatalysis is a traditional approach for solving energy crises and environmental pollution control problems. Visible lightsensitive transition metal incorporated bismuth-based metal oxides have enough potential to act as photoelectrodes in the communal of solar energy conversion and environmental remediation. These transition metal incorporated Bi-based metal oxides are of practical importance due to their efficient photocatalytic activity, high stability, low cost and non-toxicity. The latest efforts towards the limitations for improvement in performances of these materials can be controlled by different factors e. g., surface morphology, band gap, size, crystallinity, charge separation efficiency and rate of the charge transfer, etc. The alignment of band position or modification of band energy can also play an important role for these materials. Here, we primarily focus on the detailed discussion of transition metal incorporated bismuth-based oxide semiconductors with suitable modifications -their fabrication and applications to enhance the photoelectrochemical activity.

Incorporation of Cu5FeS4 QDs with Abundant Oxygen Vacancy TiO2 QDs/TiO2 OVs: Double S-Scheme Photocatalysts for Effectual N2 Conversion to NH3 under Simulated Solar Light

“…Using the Bode method, the lifetime of electrons (τ) was estimated for the desired materials, and the results are depicted in Figure 8d. 47 The calculated lifetimes of electrons from eq 2 within the samples are as TQDs/TOVs/ CFS-2 (130 ms) > TQDs/TOVs (39.9 ms) > CFS (35.7 ms) > TiO 2 OVs (25.2 ms) > TiO 2 QDs (20.0 ms). As a result, the time period of electrons in the TQDs/TOVs/CFS-2 nanocomposite is longer than its components, which are efficaciously utilized in the reduction reaction of nitrogen molecules.…”

“…As a result, the EIS, photocurrent, and PL analyses affirmed that the energy band matching of the TQDs, TOVs, and CFS components through the developed double S-scheme homo/hetero junctions was efficient in enhancing the electron–hole segregation and diminishing the recombination rate of charges. Using the Bode method, the lifetime of electrons (τ) was estimated for the desired materials, and the results are depicted in Figure d . The calculated lifetimes of electrons from eq within the samples are as TQDs/TOVs/CFS-2 (130 ms) > TQDs/TOVs (39.9 ms) > CFS (35.7 ms) > TiO 2 OVs (25.2 ms) > TiO 2 QDs (20.0 ms).…”