Development of the Silicon Drift Detector for Electron Microscopy Applications

Strüder, L.; Niculae, A.; Holl, P.; Soltau, H.

doi:10.1017/s1551929520001327

Cited by 15 publications

(5 citation statements)

References 15 publications

(27 reference statements)

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“…Typical silicon drift detectors (SDDs) are only applicable for photon energies up to approximately 15 keV as the quantum efficiency of 500 µm thick silicon rapidly drops for larger energies (see for example Figure 1 in [25]). Strüder et al reported a quantum efficiency that was always above 85% for photon energies between 500 eV and 11 keV for a 450 µm thick SDD [26]. However, as most of the X-ray spectra measured during laser material interactions cover a rather low photon energy range, measurements with an SDD can still provide valuable insights.…”

Section: Spectral X-ray Emissionmentioning

confidence: 99%

Worst-Case X-ray Photon Energies in Ultrashort Pulse Laser Processing

et al. 2022

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Ultrashort pulse laser processing can result in the secondary generation of unwanted X-rays if a critical laser irradiance of about 1013 W cm−2 is exceeded. Spectral X-ray emissions were investigated during the processing of tungsten and steel using three complementary spectrometers (based on CdTe and silicon drift detectors) simultaneously for the identification of a worst-case spectral scenario. Therefore, maximum X-ray photon energies were determined, and corresponding dose equivalent rates were calculated. An ultrashort pulse laser workstation with a pulse duration of 274 fs, a center wavelength of 1030 nm, pulse repetition rates between 50 kHz and 200 kHz, and a Gaussian laser beam focused to a spot diameter of 33 μm was employed in a single pulse and burst laser operation mode. Different combinations of laser pulse energy and repetition rate were utilized, keeping the average laser power constant close to the maximum power of 20 W. Peak irradiances I0 ranging from 7.3 × 1013 W cm−2 up to 3.0 × 1014 W cm−2 were used. The X-ray dose equivalent rate increases for lower repetition rates and higher pulse energy if a constant average power is used. Laser processing with burst mode significantly increases the dose rates and the X-ray photon energies. A maximum X-ray photon energy of about 40 keV was observed for burst mode processing of tungsten with a repetition rate of 50 kHz and a peak irradiance of 3 × 1014 W cm−2.

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Section: Spectral X-ray Emissionmentioning

confidence: 99%

Worst-Case X-ray Photon Energies in Ultrashort Pulse Laser Processing

et al. 2022

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“…It should be pointed out that µXRF mapping can be time consuming depending on the map area and instrument used. In this study, the average time taken to scan an area of ~100 × 50 mm 2 with the Si(Li) detector at optimised settings was around 2 d. It is anticipated with the newer silicon drift detector (SDD), which is able to collect X-rays at two orders of magnitude faster (Strüder et al, 2020), the total mapping time can be significantly reduced.…”

Section: Discussionmentioning

confidence: 89%

Analysis of cement paste and aggregate content of concrete using micro X-ray fluorescence

Yio

Wahid

et al. 2022

Magazine of Concrete Research

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A new method for determining the cement paste, fine aggregate and coarse aggregate content of hardened concrete using micro X-ray fluorescence (μXRF) is presented. The method involves mathematical and morphological operations to extract aggregate particles from large-area (100 x 50 mm2) composite element maps acquired with μXRF. The method was tested on five concretes containing different types of aggregates including gravel, limestone, siliceous sand, and sintered lightweight aggregates. The results were compared against point count analysis and data from the actual mix design. The average errors in relation to the mix design for the measured fine aggregate, coarse aggregate, total aggregate, cement paste contents and fine/coarse aggregate ratio were 12%, 12%, 3.4%, 10%, and 27% respectively. All measured values fell within ±4% of those point-counted. An image size of > 2000 mm2 (at least five times maximum aggregate size) was found to be required to obtain representative results. The advantages and limitations of the proposed method are discussed.

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“…Thanks to the researchers' continuous development of SDD in the past 40 years, they are now widely used in space exploration, X-ray spectroscopy, particle physics [6,7], etc. [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

et al. 2022

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The Silicon Drift Detector (SDD) with square structure is often used in pixel-type SDD arrays to reduce the dead region considerably and to improve the detector performance significantly. Usually, the anode is located in the center of the active region of the SDD with square structure (square-SDD), but the different anode positions in the square-SDD active area are also allowed. In order to explore the effect on device performance when the anode is located at different positions in the square-SDD active region, we designed two different types of square-SDD in this work, where the anode is located either in the center (SDD-1) or at the edge (SDD-2) of its active region. The simulation results of current density and potential distribution show that SDD-1 and SDD-2 have both formed a good electron drift path to make the anode collect electrons. The experimental results of device performance at the temperature range from −60 °C to 60 °C show that the anode current of the two fabricated SDDs both decreased with the decrease of temperature, but their voltage divider characteristics exhibited high stability resistance value and low temperature coefficient, thereby indicating that they could both provide corresponding continuous and uniform electric field at different temperatures. Finally, SDD-1 and SDD-2 have energy resolutions of 248 and 257 eV corresponding to the 5.9 keV photon peak of the Fe-55 radioactive source, respectively. Our experimental results demonstrate that there is no significant impact on the device performance irrespective of the anode positions in the square-SDD devices.

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Development of the Silicon Drift Detector for Electron Microscopy Applications

Abstract: Abstract:

Cited by 15 publications

References 15 publications

Worst-Case X-ray Photon Energies in Ultrashort Pulse Laser Processing

Worst-Case X-ray Photon Energies in Ultrashort Pulse Laser Processing

Analysis of cement paste and aggregate content of concrete using micro X-ray fluorescence

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

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