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Silicon Drift Detectors (SDD) [1] are rapidly replacing Si(Li) detectors for EDX microanalysis in SEM, but have yet to have an impact in the S/TEM world. Main reason for this difference is the low count rate created by thin S/TEM samples compared to the bulk samples in SEM . These low count rates make EDX mapping a very slow process in S/TEM. However, the recent introduction of higher brightness electron sources [2] and probe Cs-correctors has led to significantly increased beam currents in small electron probes and, potentially, to higher EDX count rates. Since a key advantage of the SDD is the high count rate capability, the throughput improvement compared to the Si(Li) detectors will be considerable in these new instruments. Compared to SEM, the smaller excited volumes obtained with the atomic-scale probes in the new S/TEM instruments can lead to radiation damage of beam-sensitive materials before the analysis is completed. Therefore S/TEM microanalysis needs not only the higher count rate capability, but also higher collection efficiency of the X-rays generated, in order to reduce the dose on the sample. In this paper we present a new prototype EDX detector system for an FEI 200kV TEM/STEM, in which FEI has integrated a detector system consisting of multiple SDDs, placed symmetrically around the electron beam axis in the objective lens chamber without affecting the S/TEM resolution. The SDDs with a total active area of 120 mm 2 were designed by PN Sensor to fit into the FEI design to achieve a quantum leap in solid angle of collection compared to previous designs in S/TEMs. The SDDs are cooled to achieve the optimum energy resolution, typically below 130 eV. The windowless design allows for better sensitivity for light-element detection than conventional thin-window detectors. The specially designed front-end electronics and ultra fast multi-channel pulse processor are provided by Bruker AXS MA in collaboration with FEI. The processor is capable of fast mapping with pixel dwell times down to a few microseconds and >100 kcps count rates per channel. Compared to currently available Si(Li) detectors the anticipated count rates will be an order of magnitude higher with the new detector. Additionally the new high brightness gun of FEI (X-FEG) [2] increases the brightness of the electron source compared to conventional Schottky sources, leading to a further increase in count rate, and an equivalent significant decrease in mapping time at the same spatial resolution. This improvement is illustrated in Fig. 1 where the relative minimum detectable mass MDM ~ (t.P.P/B) -1/2 (t=analysis time, P=elemental peak counts, P/B = peak-to-background ratio) [3] is shown for conventional and new EDX detector count rates at the same spatial resolution. Fig.1 also compares the MDM with EELS and, for the specific case of strontium titanate, shows that the new EDX detector is expected to be more sensitive than EELS. Further results will be reported at the conference.

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The performance of a silicon drift detector (SDD) with an integrated FET, delivered by the company PNSensor, Munich, Germany, was studied in gamma spectrometry at room temperature (23-25 C) with a LaBr 3 :Ce crystal of 6 mm diameter and 6 mm height. The SDD characteristics were compared with those measured with a Photonis XP5212 photomultiplier, a Large Area Avalanche Photodiode (LAAPD) of Advanced Photonix, Inc., and a Hamamatsu S3590-18 Photodiode (PD). Energy resolution versus gamma ray energies and its components related to the photoelectron/electron-hole pair statistics and dark noise were measured and compared. At low energies, below 100 keV, the light readout by the photomultiplier gives the best results, while for high energies, above 300 keV, the light readout by the SDD delivers superior energy resolution. In particular, the best energy resolution of 2.7% was determined for 662 keV gamma rays from a 137 Cs source.

A novel concept for improving gamma ray spectroscopy in compact instruments is presented. The dual-range photon detector (DRPD) consists of a silicon drift detector (SDD) which is optically coupled with a LaBr 3 (Ce 3+ ) crystal. In contrast to similar configurations investigated so far the SDD points to the radiation source. Pulse shape discrimination allows separating the distinct detection mechanisms which correspond to gamma absorption in the SDD or in the scintillator, respectively. This arrangement combines for the first time the excellent performance of an SDD as X-ray detector on its own with the striking energy resolution of a LaBr 3 (Ce 3+ ) scintillator read out by an SDD. The concept was successfully demonstrated with two experimental SDD-LaBr 3 (Ce 3+ ) systems. An energy resolution (FWHM) of 2.7% and 2.9% at 662 keV was measured with the two distinct systems operated in scintillator mode whereas scintillator-photomultiplier combinations with the same crystals yielded only 3.3% and 3.1%, respectively. The SDD mode provided an energy resolution surpassing the scintillator resolution by about one order of magnitude in the limited energy range up to 100 keV. Measurements with various radioactive sources demonstrated that this mode uncovers line structures which could never be resolved with scintillators or CZT detectors. Homeland security programs could profit from the proposed detector concept.

The High Time Resolution Spectrometer (HTRS) is one of the five focal plane instruments of the International X-ray Observatory (IXO). The HTRS is the only instrument matching the top level mission requirement of handling a one Crab X-ray source with an efficiency greater than 10%. It will provide IXO with the capability\ud of observing the brightest X-ray sources of the sky, with sub-millisecond time resolution, low deadtime, low pile-up (less than 2% at 1 Crab), and CCD type energy resolution (goal of 150 eV FWHM at 6 keV). The HTRS is a non-imaging instrument, based on a monolithic array of Silicon Drift Detectors (SDDs) with 31 cells in a circular envelope and a X-ray sensitive volume of 4.5 cm2 x 450 μm. As part of the assessment study carried out by ESA on IXO, the HTRS is currently undergoing a phase A study, led by CNES and CESR. In this paper, we present the current mechanical, thermal and electrical design of the HTRS, and describe the expected performance assessed through Monte Carlo simulations

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009