Development of the post-chemical mechanical polishing cleaner suppressing galvanic corrosion between copper and the Co barrier metal

Kusano, Tomohiro; Shibata, T. A.; Itou, Atsushi; Mizutani, Fumikazu

doi:10.1109/icpt.2014.7017264

Cited by 3 publications

(2 citation statements)

References 2 publications

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“…13. [38][39][40][41][42][60][61][62][63][64] To evaluate the galvanic corrosion between Co and Cu, the corrosion potential difference (ΔE corr ) derived from Tafel plots has been widely used. 31) However, the actual galvanic corrosion of Co was found to be difficult to estimate from only ΔE corr .…”

Section: Tafel Plot Evaluationmentioning

confidence: 99%

Electrochemical study on metal corrosion in chemical mechanical planarization process

Kondo

Ichige

Otsuka

2017

Jpn. J. Appl. Phys.

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Typical metal corrosions caused by the chemical mechanical planarization (CMP) process are discussed in this review paper. By categorizing them into seven kinds of corrosion, namely, chemical corrosion, crevice corrosion, crystal-orientation-dependent corrosion, narrow trench corrosion, photocorrosion, galvanic corrosion, and electrostatic-charge induced corrosion, we discuss their mechanisms and how to suppress them on the basis of electrochemical studies. Moreover, we demonstrate the usefulness of three-dimensional pH–potential diagrams for predicting corrosion issues in an actual CMP process.

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Section: Tafel Plot Evaluationmentioning

confidence: 99%

Electrochemical study on metal corrosion in chemical mechanical planarization process

Kondo

Ichige

Otsuka

2017

Jpn. J. Appl. Phys.

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“…Although the effect of the inhibitor on Cu pads has long been a topic of investigation, the effect of the inhibitor in hybrid bonding has not been previously studied. [22][23][24] Therefore, in the present study, we investigated the CMP for Cu/SiCN hybrid bonding to prevent the formation of huge recesses and avoid residues and particles on the Cu pad prior to the bonding process (Fig. 2).…”

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confidence: 99%

Minimizing Recess of Cu Pad on Hybrid Bonding with SiCN via Non-selective Chemical Mechanical Polishing and Post-cleaning Steps

Nakayama,

Hayama,

Tanaka

et al. 2024

ECS J. Solid State Sci. Technol.

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Hybrid bonding has become a promising approach to realizing fine pitch interconnection via bonding for both the wafer level and die level. The morphology and cleanliness of the bonding surface are critical to ensure a high yield. Therefore, surface planarization by chemical mechanical polishing (CMP) is considered a key process. The recess on the Cu pad must be controlled to be less than 5 nm by adjusting the removal rate between the Cu, the barrier layer, and the bonding dielectric layer. Conventionally, SiO2 has served as the bonding dielectric. However, SiCN is considered a promising dielectric because of its high bonding strength, suppression of voids, and ability to function as a Cu diffusion barrier. Here, we investigated simultaneous Cu, barrier, and SiCN CMP for hybrid bonding. Post-CMP processes such as cleaning and activation were also assessed. The results revealed that the removal rate of the three materials could be adjusted by dilution of the slurry and oxidizer. Lower selectivity was achieved at a certain dilution rate in an alkaline barrier slurry. Plasma activation revealed that the Cu passivation layer formed during cleaning was removed. Therefore, residues from CMP and post-CMP processes did not affect Cu prior to the hybrid bonding.

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Surface Topography Control on Cu Pad for Hybrid Bonding

Nakayama,

Iwata,

Ebiko

et al. 2023

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM

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Development of the post-chemical mechanical polishing cleaner suppressing galvanic corrosion between copper and the Co barrier metal

Cited by 3 publications

References 2 publications

Electrochemical study on metal corrosion in chemical mechanical planarization process

Electrochemical study on metal corrosion in chemical mechanical planarization process

Minimizing Recess of Cu Pad on Hybrid Bonding with SiCN via Non-selective Chemical Mechanical Polishing and Post-cleaning Steps

Surface Topography Control on Cu Pad for Hybrid Bonding

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