Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects

Beyer, Gerald; Satta, Alessandra; Schuhmacher, Jörg; Maex, Karen; Besling, W.; Kilpelä, O.; Sprey, Hessel; Tempel, G.

doi:10.1016/s0167-9317(02)00795-5

Cited by 45 publications

(21 citation statements)

References 4 publications

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“…[2][3][4][5][6][7] Oxygen reactive species can deeply diffuse into the film through its porosity and react with -H or methyl -CH 3 groups, which are bonded to the Si atoms of the SiOSi material network, producing Si-OH bonds through the following reactions as proposed by Chang et al 20 wSi -CH 3 + 4O → w Si -OH + CO 2 + H 2 O ͑⌬H r = − 2266 kj mol −1 at 298 K͒. It has been shown that O 2 -based ashing plasmas tend to oxidize SiOC͑-H͒ films converting the top layer into a hydrophilic SiO 2 -like material.…”

Section: A O 2 Plasmamentioning

confidence: 99%

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

Possémé

Chevolleau

David

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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This work focuses on the impact of oxidizing and reducing ash chemistries on the modifications of two porous SiOCH films with varied porosities (8% [low porosity (lp)-SiOCH] and 45% [high porosity (hp)-SiOCH]). The ash processes have been performed on SiOCH blanket wafers in either reactive ion etching (RIE) or downstream (DS) reactors. The modifications of the remaining film after plasma exposures have been investigated using different analysis techniques such as x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy (FTIR), x-ray reflectometry, mercury probe capacitance measurement (C-V), and spectroscopic ellipsometry (SE). FTIR analyses show that the lp-SiOCH film is not significantly altered by any of the ash processes investigated (DS-H2∕He, RIE-O2, and RIE-NH3), except by downstream oxidizing plasmas (DS-O2 or DS-N2∕O2) which induce some carbon depletion and moisture uptake, resulting in a slight increase of the k value. The porosity amplifies the sensitivity of the material to plasma treatments. Indeed, hp-SiOCH is fully modified (moisture uptake and carbon depletion) under oxidizing downstream plasma exposures (DS-O2 and DS-N2∕O2), while it is partially altered with the formation of a denser and modified layer (40–60nm thick), which is carbon depleted, hydrophilic, and composed of SiOxNyHz with RIE-NH3 and DS-N2∕H2 plasmas and SiOxHy with RIE-O2 plasma. In all the cases, the k value increase is mainly attributed to the moisture uptake rather than methyl group consumption. hp-SiOCH material is not altered using reducing DS chemistries (H2∕He and H2∕Ar). The porous SiOCH film degradation is presented and discussed with respect to chemistry, plasma parameters, and plasma mode in terms of film modification mechanism.

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Section: A O 2 Plasmamentioning

confidence: 99%

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

Possémé

Chevolleau

David

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…45%), indicating a deep damage in the ULK as seen in the composition profiles The impact of the other main plasma options (O 2 RF, NH 3 RF, O 2 /CO RF) is shown in Figure 6a, with cumulative lateral capacitances between lines defined at minimum pitch with line width (W) and spaces between lines (S) of 90nm. a b Figure 6: Cumulative distributions of lateral capacitance for structures at minimum pitch (W=90nm; S=90nm) for (a) main plasmas (NH 3 The most interesting plasma is the NH 3 reducing treatment.…”

Section: Single-damascenementioning

confidence: 99%

Evaluation of Damages and Pore-sealing Capabilities of Oxidizing and Reducing Etch Plasmas for Single and Dual Damascene Patterning of Porous Ultra-Low-k Materials

Ollier

Clain²,

Fox³

et al. 2006

MRS Proc.

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“…One concern with porous materials is the fact that pores open to the surface and connected internally are pathways for penetration of gases, liquids [2] and ALD precursors intended for Cu barrier deposition [3,4]. Pore sealing to prevent penetration may become a requirement for the integration of porous dielectrics in sub-90 nm interconnects [5].…”

Section: Introductionmentioning

confidence: 99%

Damage minimized plasma pore sealing of microporous low k dielectrics

Abell

Maex

2004

Microelectronic Engineering

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Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects

Cited by 45 publications

References 4 publications

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

Evaluation of Damages and Pore-sealing Capabilities of Oxidizing and Reducing Etch Plasmas for Single and Dual Damascene Patterning of Porous Ultra-Low-k Materials

Damage minimized plasma pore sealing of microporous low k dielectrics

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