Development of SIMUS 2D/F: A stress analysis program for thin multilayer structure.

Sakata, Shinji; Shimizu, Takumi; Isomae, Seiichi; Masuda, H.

doi:10.1299/kikaia.55.1652

Cited by 11 publications

(3 citation statements)

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“…The strain field in the channel region of MOSFETs caused by the SiN-film stress was analyzed by using a finite-element-method stress simulation program, which takes the intrinsic stress into account (9) . This program analyzes the stress in a thin-film structure, such as MOSFETs, when adding and removing thin films, that is, during the deposition and etching processes.…”

Section: Methods For Normal Strain Loadingmentioning

confidence: 99%

Development of Evaluation Method for Estimating Stress-Induced Change in Drain Current in Deep-sub-micron MOSFETs

Kumagai

Ohta

Miura

et al. 2007

JMMP

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We developed a method to predict the change in the drain current in deep-sub-micron MOSFETs due to strain. The change in MOSFET drain current can be explained as a linear function of normal strains. The strain sensitivities of the MOSFETs drain current were clarified experimentally. The results indicated that drain current in N-MOSFETs increases with increases in in-plane tensile strains and normal compressive strain. Whereas, the results indicated the drain current of in P-MOSFETs increases with in-plane compressive strain parallel to the channel, and in-plane tensile strain perpendicular to the channel. The drain current also increases with normal tensile strain. The predicted values showed good agreement with the measured values. This method for predicting change in the drain current due to stress will help us to improve electronic performance of MOSFETs.

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Section: Methods For Normal Strain Loadingmentioning

confidence: 99%

Development of Evaluation Method for Estimating Stress-Induced Change in Drain Current in Deep-sub-micron MOSFETs

Kumagai

Ohta

Miura

et al. 2007

JMMP

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“…The out-of-plane displacements of the nodes placed on each opposite plane are coupled so as to be equal to each other. Since the high stress region needed for the dislocation-dynamics simulation is only the vicinity of the STI region, and the other silicon substrate region is about 10 times larger than the high stress region, equivalent stiffness elements, which mimic the stiffness of the remaining thick substrate, are used in order to reduce the number of elements in the substrate region [19]. The material constants of the AA (Si), STI (SiO 2 ), and gate (poly-Si) are shown in Table 1.…”

Section: Stress Analysis By the Finite Element Methodsmentioning

confidence: 99%

Application of three-dimensional dislocation dynamics simulation to the STI semiconductor structure

Izumi

Miyake

Sakai

et al. 2005

Materials Science and Engineering: A

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“…To estimate the order of strain on gate dielectrics in MOS transistors, we used a finite element method (FEM) analysis, in which the formation conditions, such as film deposition temperature and the shape change of the film by deposition, were precisely considered by adding FEM elements at each temperature (16) . It was clarified that calculated results by this method show good agreement with measured ones (17) .…”

Section: Strain Field On Gate Dielectric Materials In Mos Transistorsmentioning

confidence: 99%

First-Principles-Calculation Method for Optimizing Strain to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics

Kanegae

Moriya

Iwasaki

2005

JSME Int. J., Ser. A

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We developed a method for optimizing strain to reduce gate leakage current in metaloxide-semiconductor (MOS) transistors by using first-principles calculations. This method was used to investigate the possibility of decreasing gate leakage current by controlling the strain on gate dielectric materials. We found that tensile strain increases the leakage current through both silicon oxide (SiO 2 ) and silicon oxynitride (SiON) gate dielectrics, whereas compressive strain hardly changes the leakage current through SiO 2 gate dielectrics and decreases the leakage current through SiON gate dielectrics. These changes reflect straininduced changes in the band gaps of these materials. Using finite element analysis to estimate the strain in MOS transistors, we showed the usability of SiON in terms of gate leakage currents and the importance of controlling the strain on the gate dielectric materials.

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Development of SIMUS 2D/F: A stress analysis program for thin multilayer structure.

Cited by 11 publications

References 0 publications

Development of Evaluation Method for Estimating Stress-Induced Change in Drain Current in Deep-sub-micron MOSFETs

Development of Evaluation Method for Estimating Stress-Induced Change in Drain Current in Deep-sub-micron MOSFETs

Application of three-dimensional dislocation dynamics simulation to the STI semiconductor structure

First-Principles-Calculation Method for Optimizing Strain to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics

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