Development of silicon microheaters for chemoresistive gas sensors

Brida, S.; Ferrario, L.; Giacomozzi, F.; Giusti, Domenico; Guarnieri, V.; Margesin, B.; Pignatel, G.; Soncini, G.; Vasil'ev, Alexey N.; Verzellesi, Giovanni; Zen, M.

doi:10.1117/12.341164

Cited by 3 publications

(2 citation statements)

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“…[1][2][3][4] To increase sensitivity, a preconcentrator with heating elements and adsorbents is used to adsorb gases and release them at higher concentration to the separation columns. Microheaters in metal [6][7][8][9] or polycrystalline Si [10][11][12] have been fabricated with limited thickness. High aspect ratio microheaters are desirable since they provide large volume for high adsorbent capacity and hence high sensitivity.…”

Section: Introductionmentioning

confidence: 99%

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Freestanding microheaters in Si with high aspect ratio microstructures

Tian

Pang

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSingle-mask, three-dimensional microfabrication of high-aspect-ratio structures in bulk silicon using reactive ion etching lag and sacrificial oxidation Appl. Phys. Lett. 85, 6281 (2004); 10.1063/1.1834720 Thick and thermally isolated Si microheaters for microfabricated preconcentrators J. Vac. Sci. Technol. B 21, 274 (2003); 10.1116/1.1539065Fabrication and electrical characterization of high aspect ratio silicon field emitter arrays Freestanding, high aspect ratio microstructures in Si were micromachined as thick microheaters. These microheaters, combined with adsorbents, can be used as preconcentrators in a micromachined gas chromatography system. Dry etching of Si using etch and passivation cycles has been developed to produce 240 m thick Si microheaters with 3 m wide wires, achieving a high aspect ratio of 80:1. This optimized dry etching technology results in high etch rates with vertical profiles for thick Si microheaters up to 535 m. Microheaters with 40 m wide wires, 110 m gaps, 400 m thick, and an area of 9 mm 2 have been fabricated. With the heater on a 140 m thick Si membrane, it takes 1320 mW to increase the temperature by 290°C. The power consumption is reduced to 447 mW for the same temperature raise with a freestanding Si microheater. Heating response for freestanding Si microheaters with different thicknesses is also studied. These Si microheaters have fast response times and reach 75% of the final temperature in 5 s. Microheaters consisting of Si wires and posts show similar response time and heating uniformity. In addition, power consumption is reduced by thermal isolation of the microheaters. These thick, freestanding high aspect ratio Si microheaters can provide high power efficiency, large adsorbent capacity, and high mechanical strength.

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Section: Introductionmentioning

confidence: 99%

“…[7][8][9][10][11][12][13][14] These microheaters suffered from heat loss to the membrane. [7][8][9][10][11][12][13][14] These microheaters suffered from heat loss to the membrane.…”

Section: Introductionmentioning

confidence: 99%