Development of SiC–SiC joint by reaction bonding method using SiC/C tapes as the interlayer

Microstructure of reaction layer and its effect on the joining strength of SiC/SiC joints brazed using Ag-Cu-In-Ti alloy

“…Ceramic joining techniques provide a lower-cost and higher-reliable method to solve the problem. Different ceramic joining techniques, including adhesive, brazing, diffusion bonding, glass bonding and reaction bonding, have been developed to meet different demands [1][2][3][4][5][6]. Among these techniques, active brazing attracts great interest for its high joining strength and convenience in engineering applications.…”

Joining of silicon carbide ceramics using a silicon carbide tape

“…SiC‐based transient eutectic‐phase joining with mixed oxide additives such as Al 2 O 3 –Y 2 O 3 and Al 2 O 3 –Y 2 O 3 –SiO 2 SiC reaction bonding with a carbon interlayer followed by subsequent Si infiltration, which leads to the formation of SiC via the Si + C → SiC reaction Glass ceramic joining using SiO 2 –Al 2 O 3 –MgO, SiO 2 –Al 2 O 3 –Y 2 O 3 , CaO–Al 2 O 3 , SiO 2 –Al 2 O 3 –MgO–BaO, SiO 2 –Al 2 O 3 –MgO, or Nd 2 O 3 –Al 2 O 3 –SiO 2 glasses, which form a bonding layer between SiC components. Polymer‐derived ceramic joining, which uses preceramic polymers as a bonding phase such as allylhydridopolycarbosilane, methyl‐hydroxyl‐siloxane, polycarbosilane, polymethylsilsesquioxane, and modified polymers based on polymethylsilane .…”

“…This difference in composition between the base SiC material and the interlayer results in the build‐up of residual stresses around the joined layer and/or interfaces because of the difference in thermal expansion coefficients between SiC and the interlayer. These residual stresses often lead to cracking in and/or near the interlayer . Although no cracking was observed, the residual stresses are often detrimental to the mechanical properties of joined SiC ceramics.…”

Pressure‐less joining of C/SiC and SiC/SiC by a MoSi2/Si composite

“…Titanium disilicide (TiSi 2 ) with addition of SiC particles and tape casted TiB2, SiC and C mixtures were also used Pure metals (Cu, Ni, Mo, Si, Ti, Zr, and Al) have been used to obtain solid state joining between ceramics or to reduce thermal expansion mismatch related stresses …”

“…3 Brazing has been extensively used and different brazes have been tested: Cu-Ti or Ag-Cu-Ti based alloys, Ni-base alloys, amorphous (Ni-Cr-Si-B) or filler reinforced brazing alloys, palladium based or eutectic Si-X (X: Ti,Cr,V,Ta) systems. [4][5][6][7][8] Titanium disilicide (TiSi 2 ) with addition of SiC particles and tape casted TiB2, SiC and C mixtures were also used [9][10][11] Pure metals (Cu, Ni, Mo, Si, Ti, Zr, and Al) have been used to obtain solid state joining between ceramics or to reduce thermal expansion mismatch related stresses. 12 Stresses due to thermal expansion mismatch after joining can be significantly reduced using a Mo interlayers because of similarity in Mo and SiC CTE (SiC=2.2910 -6 / K; C/SiC=2910 -6 /K, SiC/SiC=4910 -6 /K Mo=5910 -6 /K) 13 As an example, an interesting joining material has been obtained by combining Ni-Si with Mo for the joining of SiC.…”