Development of low temperature stoichiometric solution combustion derived transparent conductive ternary zinc tin co-doped indium oxide electrodes

Pujar, Pavan; Gandla, Srinivas; Singh, Mukesh; Gupta, Bikesh; Tarafder, Kartick; Gupta, Dipti; Noh, Yong‐Young; Mandal, Saumen

doi:10.1039/c7ra09189c

Cited by 20 publications

(13 citation statements)

References 50 publications

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“…High-temperature annealing has yielded crystalline phases in various oxides. [37,38] However, low-temperature crystallization is still considered challenging; it requires the use of modulated solution chemistry and an apt annealing strategy. [28,39] If the films are somehow allowed to crystallize, then the resulting phase is generally the most stable.…”

Section: Resultsmentioning

confidence: 99%

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf_0.5Zr_0.5O₂

Pujar

Cho

Gandla

et al. 2021

Adv Funct Materials

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The fabrication of Hf 0.5 Zr 0.5 O 2 -ferroelectric negative capacitor using solution combustion is presented for the first time. The starting materials used for the solution combustion to form equimolar Hf 0.5 Zr 0.5 O 2 are to act as both combustible elements and cation sources. Jain's method, which is used for estimating the stoichiometric quantities of precursors in propellant chemistry, has also been modified and applied. The conventional assumption for this method that molecular oxygen does not take part in the reaction is refuted and stoichiometric combustion in the presence of molecular oxygen is proposed. This reaction is followed by post-rapid thermal processing to stabilize the metastable, non-centrosymmetric orthorhombic phase. The thin film stacks, Hf 0.5 Zr 0.5 O 2 /HfO 2 , are used to achieve sub-thermionic swing (forward sweep: 25.42 ± 8.05 mV dec −1 , reverse sweep: 42.56 ± 4.87 mV dec −1 ) in MoS 2 negative capacitance field effect transistors with a hysteresis of ≈40 mV at 1 nA, resulting in ultra-low-power operation.

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Section: Resultsmentioning

confidence: 99%

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf_0.5Zr_0.5O₂

Pujar

Cho

Gandla

et al. 2021

Adv Funct Materials

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“…As the IZTO films exhibit direct optical transition [ 20 ], the parameterized semiconductor oscillator function (PSEMI) model, which analytically describes the dielectric functions as the summation of several energy-bounded Gaussian-broadened polynomials and poles, accounting for index effects due to absorption occurring outside the region being modeled, was used ( ε (PSEMI) ) [ 21 , 22 , 23 ].…”

Section: Resultsmentioning

confidence: 99%

Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film

et al. 2021

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A spectroscopic ellipsometry study on as-deposited and annealed non-stoichiometric indium zinc tin oxide thin films of four different compositions prepared by RF magnetron sputtering was conducted. Multi-sample analysis with two sets of samples sputtered onto glass slides and silicon wafers, together with the analysis of the samples onto each substrate separately, was utilized for as-deposited samples. Annealed samples onto the glass slides were also analyzed. Spectroscopic ellipsometry in a wide spectral range (0.2–6 eV) was used to determine optical constants (refractive index n and extinction coefficient k) of these films. Parameterized semiconductor oscillator function, together with Drude oscillator, was used as a model dielectric function. Geometrical parameters (layer thickness and surface roughness) and physical parameters (direct optical bandgap, free carrier concentration, mobility, and specific electrical resistivity) were determined from spectroscopic ellipsometry data modeling. Specific electrical resistivity determined from the Drude oscillator corresponds well with the results from electrical measurements. Change in the optical bandgap, visible especially for annealed samples, corresponds with the change of free carrier concentration (Moss–Burstein effect). Scanning electron microscope did not reveal any noticeable annealing-induced change in surface morphology.

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“…Similar observations have been made in complex ternary oxides such as IZTO. [79] The low-temperature crystallinity achieved in IZTO films is evidence of the fuel-acetylacetone additive. Apart from conventional dopants (i.e., Sn and c) high-resolution focused ion beam-scanning electron cross-sectional micrograph of TFT, d) transfer characteristic of Si/aqueous processed AlO x / GZTO/Al TFT.…”

Section: Combustion Processed Transparent Electrodesmentioning

confidence: 99%

“…Similar observations have been made in complex ternary oxides such as IZTO. [ 79 ] The low‐temperature crystallinity achieved in IZTO films is evidence of the fuel‐acetylacetone additive. Apart from conventional dopants (i.e., Sn and Zn in In 2 O 3 ), doping of several elements from the group 3/4f has been demonstrated using the combustion processing.…”

Section: Combustion Reactionmentioning

confidence: 99%

Trends in Low‐Temperature Combustion Derived Thin Films for Solution‐Processed Electronics

Pujar

Gandla

Gupta

et al. 2020

Adv Elect Materials

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The emergence of large-area electronics with unprecedented multifunctionalities of optical and electrical properties and ubiquitous coverage, such as transparent displays, building sensors, smart windows, car surface, smart textiles, and solar Appreciable advancement of low-temperature combustion processing brings a step closer to the fulfillment of large-area, flexible electronics. The maximum temperature of deposition is successfully reduced below the softening temperature of the polymeric substrates. The method embodies the incorporation of fuel-and oxidizer-ligands in the precursor, which leads to an exothermic reaction resulting in low-temperature conversion and/or densification of the metal oxide thin films. A series of electrically conducting, semiconducting, and high permittivity dielectric metal oxides are deposited on varied substrates, including flexible plastic substrates, such as polyimide and aromatic polyester. The combustion processing is efficient in depositing metal, metal oxide, metal-metal oxide composite thin films at considerably low temperatures. In addition, the combustible precursors are considered compatible with diverse solution deposition methods such as spin coating, spray coating, inkjet printing, and blade coating. The combustion processed metal oxide thin films have the potential to exhibit acceptable device performance of thin film transistors, solar cells, gas sensors, organic light emitting diodes, and so on. The present review not only covers the ongoing research in solution combustion-based deposition, but also discusses potential of the various devices with combustion-derived thin films of functional oxides as active/passive components.

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Development of low temperature stoichiometric solution combustion derived transparent conductive ternary zinc tin co-doped indium oxide electrodes

Abstract: Here, the development of transparent conductive zinc tin co-doped indium oxide (IZTO: In1.4Sn0.3Zn0.3O3) ternary electrodes is addressed through low temperature solution combustion processing.

Cited by 20 publications

References 50 publications

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf_0.5Zr_0.5O₂

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf_0.5Zr_0.5O₂

Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film

Trends in Low‐Temperature Combustion Derived Thin Films for Solution‐Processed Electronics

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Development of low temperature stoichiometric solution combustion derived transparent conductive ternary zinc tin co-doped indium oxide electrodes

Abstract: Here, the development of transparent conductive zinc tin co-doped indium oxide (IZTO: In1.4Sn0.3Zn0.3O3) ternary electrodes is addressed through low temperature solution combustion processing.

Cited by 20 publications

References 50 publications

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2

Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film

Trends in Low‐Temperature Combustion Derived Thin Films for Solution‐Processed Electronics

Contact Info

Product

Resources

About

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf_0.5Zr_0.5O₂

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf_0.5Zr_0.5O₂