Development of InGaN-based red LED grown on (0001) polar surface

Hwang, J. I.; Hashimoto, Ryota; Saitô, Shôzô; Nunoue, Shinya

doi:10.7567/apex.7.071003

Cited by 236 publications

(207 citation statements)

References 40 publications

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“…Since the indium composition of InGaN is limited by its low miscibility, the growth of InGaN layers with high In composition and good crystalline quality remains a challenge. 1 Recently, a red LED based on In x Ga 1−x N/GaN multiple quantum well (MQW) has been developed; [2][3][4] however, a special reactor design was needed and the full width at half maximum (FWHM) increased during increased current injection. On the other hand, there have been several reports on the properties of Eu-doped GaN (GaN:Eu) based red LEDs in recent years.…”

mentioning

confidence: 99%

Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

et al. 2016

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The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu3+ ions was manipulated, yielding a higher emission intensity from the Eu3+ ions and a smoother sample surface. The optimal growth temperature was determined to be 960 °C and was used to fabricate a GaN-based red light-emitting diode with a significantly higher output power.

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mentioning

confidence: 99%

Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

et al. 2016

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“…The S ( λ ) is used to calculate the ( x , y ) of each subpixel with the CIE color matching functions,

\overset{x}{true}

( λ ),

\overset{y}{true}

( λ ),

\overset{z}{true}

( λ ), to first find the tristimulus values and the ( x , y ) for each color . The blue, green, and red are selected to have spectral parameters of λ 0 / Δλ that are 465 nm / 25 nm, 530 nm / 35 nm, and 625 nm / 48 nm, respectively . For InGaN‐based LEDs, the Δ λ increases with increasing indium content in the quantum wells and hence wavelength.…”

Section: Display Model and Metricsmentioning

confidence: 99%

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Wierer

Tansu

2019

Laser & Photonics Reviews

112

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Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance, efficiency, and large color gamut, are of great interest for applications such as watches, phones, and virtual displays. The high pixel density requirements of some emissive displays require a particular class of LEDs that are sub‐20‐micrometers in length, called micro‐LEDs. While state‐of‐the‐art emissive displays incorporate organic LEDs, an alternative is inorganic III‐nitride LEDs with potential reliability and efficiency benefits. Here we explore the performance, challenges, and prospective outcomes for III‐nitride micro‐LEDs to produce efficient emissive displays and provide insight to advance this technology. Calculations are performed to determine the operating points for the micro‐LEDs and the efficiency of the overall emissive display. It is shown that III‐nitride micro‐LEDs suffer from some of the same problems as their larger‐sized solid‐state lighting LED cousins; however, the operating conditions of micro‐LEDs can result in different challenges and research efforts. These challenges include improving efficiency at low current densities; improving the efficiency of longer wavelength (green and red) LEDs; and creating device designs that can overcome low coupling efficiency, high surface recombination, and display assembly difficulties.

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“…14 Thus, although the external quantum efficiency (EQE) of blue LED surpasses 80%, 15 the EQE of red LED is less than 3%, which possibly origins from the optical quenching as a result of higher threading dislocation density. 14,16 The improvement of emission efficiency of longwavelength LED is important for the non-phosphor white LED. By using large overlap QW concept, the emission efficiency of InGaN QW LED can be enhanced due to the suppression of charge separation in the active region through either on c-plane or non/semi-polar orientated approach.…”

Section: Introductionmentioning

confidence: 99%

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

Liu

Zhang

et al. 2015

Journal of Applied Physics

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Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO 2 structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%-53% as compared to that for the SiO 2 coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO 2 structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer. V C 2015 AIP Publishing LLC.

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Development of InGaN-based red LED grown on (0001) polar surface

Cited by 236 publications

References 40 publications

Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

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