Development of high-voltage SiC Power Electronic Devices

Sang, Ling; Zhang, Wenting; An, Yunzhu; Wang, Liang; Chen, Yanfang; Li, Jialin; Du, Yu; Li, Rui; Niu, Xiping; Yang, Xiaolei; Li, Shiyan; Chen, Gang; Tang, Xingfu; Wu, Junmin; Yang, Fei

doi:10.1109/sslchinaifws54608.2021.9675164

Cited by 4 publications

(2 citation statements)

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“…In recent years, advancements in power distribution and energy transmission applications, including smart grids, ultra-high voltage power transportation, and pulse power technology, have heightened the demand for high-voltage power devices [1][2][3][4]. Typically, conventional silicon (Si) power devices can withstand voltages up to 8 kV [5].…”

Section: Introductionmentioning

confidence: 99%

“…Wolfspeed (formerly known as Cree Inc., Durham, NC, USA) have announced their development of SiC MOSFETs with impressive blocking voltages of 10 kV and 15 kV [10]. Concurrently, there has been a technological breakthrough in bipolar devices rated above 20 kV, achieving PIN diodes with blocking voltages ranging from 7 to 39 kV, further pushing the boundaries in high-voltage device engineering [4,11]. In addition, 10 kV SBD and JBS diodes have also been produced [12].…”

Section: Introductionmentioning

confidence: 99%

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Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure

Wu,

Li,

et al. 2024

Electronics

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In this study, a novel integrated 4H-SiC reverse-conducting gate turn-off thyristor (GTO) featuring an N-type floating (NF) structure is proposed. The proposed NF-structured 4H-SiC GTO outperforms conventional reverse-conducting GTOs in forward conduction, effectively eliminating the snapback phenomenon. This is achieved by increasing lateral resistance above the P-injector and modifying the electron current path during early turn-on. NF structures with a doping concentration of 2 × 1014 cm−3 and thicknesses exceeding 4 μm have been indicated to successfully eliminate the snapback phenomenon. Moreover, the anode-shorted structure enhances the GTO’s breakdown voltage and concurrently reduces turn-off losses by 85% at low current densities.

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