Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure
Chengcheng Wu,
Juntao Li,
Zhiqiang Li
et al.
Abstract:In this study, a novel integrated 4H-SiC reverse-conducting gate turn-off thyristor (GTO) featuring an N-type floating (NF) structure is proposed. The proposed NF-structured 4H-SiC GTO outperforms conventional reverse-conducting GTOs in forward conduction, effectively eliminating the snapback phenomenon. This is achieved by increasing lateral resistance above the P-injector and modifying the electron current path during early turn-on. NF structures with a doping concentration of 2 × 1014 cm−3 and thicknesses e… Show more
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