Development of high reflective phase shift type absorber for future generation EUV mask blank (Conference Presentation)

Ikebe, Yohei; Nozawa, Osamu; Onoue, T.

doi:10.1117/12.2550941

Cited by 4 publications

(4 citation statements)

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“…Absorber material is one of the direct contributors for lithographic performances. Lots of paper reported about the alternative absorber materials and those effects for the lithographic performances [4][5][6][7]. Alternative multilayer is also highlighted to reduce a non-telecntricity [8,9].…”

Section: Introductionmentioning

confidence: 99%

Proposal of cap layer design combined with absorber for EUV mask

Ikebe,

Maeda,

Umezawa

et al. 2024

Optical and EUV Nanolithography XXXVII

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EUV blank is a complicated system including substrate, multilayer, cap layer, absorber, and so on. All those structures contribute to the lithographic performances. In this paper, lithographic impacts of cap layer were simulated. By evaluating lithographic performances for both a binary type mask and a phase shift type mask, impact of cap layer thickness was clarified especially for best focus range of PSM. Second, impacts of cap layer recess induced by mask and lithographic processes were evaluated. Bayesian optimization method was applied to optimize lithographic performances efficiently. The results show thinner cap thickness enables to improve dose aware resolution (NILS x Threshold 0.5 ) and its stability. On the other hand, thinner cap thickness may cause worse durability for the processes such as etching and repairing. So balance between lithographic performances and film durability should be considered.

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Section: Introductionmentioning

confidence: 99%

Proposal of cap layer design combined with absorber for EUV mask

Ikebe,

Maeda,

Umezawa

et al. 2024

Optical and EUV Nanolithography XXXVII

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“…Figure 1(a) schematically depicts a low-n mask, in which the absorber layer is made of low-n material. 2 Figure 1(b) indicates the n and k values of materials at 13.5 nm wavelength. The current tantalum boron nitride (TaBN) absorber is highlighted in red.…”

Section: Introductionmentioning

confidence: 99%

“…Overall, the observed industry trend for the EUV absorber is in the direction of low-refractive index (n). Figure 1(a) schematically depicts a low-n mask, in which the absorber layer is made of low-n material 2 Figure 1(b). indicates the n and k values of materials at 13.5 nm wavelength.…”

Section: Introductionmentioning

confidence: 99%

Interaction between aberrations and mask 3D effects for low-n and Ta-based absorbers in extreme ultraviolet lithography

Lare

Finders

Rhee

2023

J. Micro/Nanopattern. Mats. Metro.

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Low-n masks have gained strong interest due to their potential to simultaneously improve dose and imaging contrast for dense clips. We have previously presented that for the imaging of isolated features mask bias, assist features are crucial to minimize the focus range through pitch. In this paper, we elaborate on aberration sensitivity for different mask-absorber types. We observe that even aberration sensitivities can change significantly by changing the mask-absorber type for the same use case. We show that even aberration sensitivity and bestfocus shifts are coupled and that they can also be solved together by applying mask and target bias and/or assist features. Finally, we show how assist-feature position optimization can reduce the impact of odd aberrations on two-bar features.

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“…Low-n mask absorbers for EUV have recently gained strong interests due to their potential to not only increase contrast (NILS), but also dose by having optimum imaging performance at more open mask bias values [1]. Overall, the observed industry trend for the EUV absorber is in the direction of low-refractive index (n).…”

Section: Introductionmentioning

confidence: 99%

Low-n mask progressing insights: focus on isolated features

Lare

Finders

Rhee

2022

International Conference on Extreme Ultraviolet Lithography 2022

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Low-n masks have gained strong interest due to their potential to simultaneously improve dose and imaging contrast for dense clips. We've presented before that for the imaging of isolated features mask bias and assist features are crucial to minimize the focus range through pitch. In this paper we elaborate on aberration sensitivity for different mask absorber types. We observe that even aberration sensitivities can change significantly by changing the mask absorber type for the same use case. We show that even aberration sensitivity and best-focus shifts are coupled and that they can also be solved together by applying mask & target bias and/or assist features. Finally we show how assist-feature position optimization can reduce the impact of odd aberrations on two-bar features.

show abstract

Development of high reflective phase shift type absorber for future generation EUV mask blank (Conference Presentation)

Cited by 4 publications

References 0 publications

Proposal of cap layer design combined with absorber for EUV mask

Proposal of cap layer design combined with absorber for EUV mask

Interaction between aberrations and mask 3D effects for low-n and Ta-based absorbers in extreme ultraviolet lithography

Low-n mask progressing insights: focus on isolated features

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