Development of High Power and High Junction Temperature SiC Based Power Packages

Tang, Gongyue; Wai, Leong Ching; Lim, Teck Guan; Ye, Yong Liang; Ravinder, Pal Singh; Bu, Lin; Lau, Boon Long; Chai, Tai Chong; Yamamoto, Kazuya; Zhang, Xiaowu

doi:10.1109/ectc.2019.00218

Cited by 5 publications

(4 citation statements)

References 4 publications

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“…(3) The assembly after mounting is sintered by the pressure-less sintering according to the preset temperature profile; (4) Cooling. Void defects are a critical concern for large-area sintered silver attachment using the pressure-less sintering [59] . Void defects must be controlled before sintering, especially during mounting devices.…”

Section: Pressure-assisted Sinteringmentioning

confidence: 99%

“…Void defects must be controlled before sintering, especially during mounting devices. To minimize the void defects, some researchers designed and optimized the dispensing or stencil-print pattern of silver pastes [59][60] . Fig.…”

Section: Pressure-assisted Sinteringmentioning

confidence: 99%

“…Fig. 8a shows the patterns during the dispensing process [59] . The air bubbles of the as-dispensing paste during the mounting can be squeezed out.…”

Section: Pressure-assisted Sinteringmentioning

confidence: 99%

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Brief review of silver sinter-bonding processing for packaging high-temperature power devices

Yan

Liang

Mei

et al. 2020

Chin. J. Electr. Eng.

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Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power electronics. Excellent thermal conductivity, high melting point/remelting temperature and low-temperature sintering behaviors of the silver sintered attachment meet the requirements of high-temperature applications for power devices, specifically SiC devices. The merits and demerits of the existing pressure-assisted sintering and pressure-less sintering techniques using nano-scale, micro-scale and micro-nano-scale hybrid silver sintered materials are separately presented. The emerging rapid sintering approaches, such as the electric-assisted approach, are briefly introduced and the technical outlook is provided. In addition, the study highlights the importance of creating a brief resource guide on using the correct sintering methods.

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Section: Pressure-assisted Sinteringmentioning

confidence: 99%

Section: Pressure-assisted Sinteringmentioning

confidence: 99%

See 1 more Smart Citation

Brief review of silver sinter-bonding processing for packaging high-temperature power devices

Yan

Liang

Mei

et al. 2020

Chin. J. Electr. Eng.

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show abstract

“…This helped alleviate thermal coupling and reduced thermal resistance caused by multiple chips placed adjacent to one another [21]. References [22], [23] have developed a package structure that embeds SiC devices inside an active metal brazed (AMB) ceramic substrate with a cavity. This is attached to heat sinks on the top and at the bottom of the substrate to reduce the junction-tocase thermal resistance and improve heat dissipation.…”

Section: Introductionmentioning

confidence: 99%

Assessing the Fatigue Life of SiC Power Modules in Different Package Structures

et al. 2021

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Advanced power module packaging technology is demanded with the commercialization of silicon carbide (SiC) power devices with superior performance. This paper presents an overview of currently available packaging structures suitable for SiC power modules that can deliver good performance during operation at a high temperature, frequency, and power density while incurring low loss at a high switching speed. Four typical structures-the common single-sided cooling package structure, and three double-sided cooling package structures-were chosen for comparative thermal reliability analysis that was conducted by using a finite element simulation. One of the double-sided cooling 3D package structures yielded good thermal performance, and was highly reliable. It not only lowered the junction temperature by using a single heat source but also reduced the stress and strain of the chip and the solder layer, respectively, by nearly 30% less than the single-sided cooling structure. In addition, the fatigue life of the solder under thermal cycling was significantly longer than in the other structures.INDEX TERMS Double-sided cooling, fatigue life prediction, package structure, SiC power module, thermal cycling.

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A Reliable Packaging Design for 1200-V, 500-A SiC Half-bridge Modules with Junction Temperature over 200 °C

Wang

Zhou

et al. 2023

2023 IEEE 6th International Electrical and Energy Conference (CIEEC)

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Development of High Power and High Junction Temperature SiC Based Power Packages

Cited by 5 publications

References 4 publications

Brief review of silver sinter-bonding processing for packaging high-temperature power devices

Brief review of silver sinter-bonding processing for packaging high-temperature power devices

Assessing the Fatigue Life of SiC Power Modules in Different Package Structures

A Reliable Packaging Design for 1200-V, 500-A SiC Half-bridge Modules with Junction Temperature over 200 °C

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