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Joule heating is inevitable when an electric field is applied across a conducting medium. It would impose limitations on the performance of electrokinetic microfluidic devices. This article presents a 3-D mathematical model for Joule heating and its effects on the EOF and electrophoretic transport of solutes in microfluidic channels. The governing equations were numerically solved using the finite-volume method. Experiments were carried out to investigate the Joule heating associated phenomena and to verify the numerical models. A rhodamine B-based thermometry technique was employed to measure the solution temperature distributions in microfluidic channels. The microparticle image velocimetry technique was used to measure the velocity profiles of EOF under the influence of Joule heating. The numerical solutions were compared with experimental results, and reasonable agreement was found. It is found that with the presence of Joule heating, the EOF velocity deviates from its normal "plug-like" profile. The numerical simulations show that Joule heating not only accelerates the sample transport but also distorts the shape of the sample band.

Joule heating is present in electrokinetic transport phenomena, which are widely used in microfluidic systems. In this paper, a rigorous mathematical model is developed to describe the Joule heating and its effects on electroosmotic flow and mass species transport in microchannels. The proposed model includes the Poisson equation, the modified Navier−Stokes equation, and the conjugate energy equation (for the liquid solution and the capillary wall). Specifically, the ionic concentration distributions are modeled using (i) the general Nernst−Planck equation and (ii) the simple Boltzmann distribution. The relevant governing equations are coupled through the temperature-dependent solution dielectric constant, viscosity, and thermal conductivity, and, hence, they are numerically solved using a finite-volume-based CFD technique. The applicability of the Nernst−Planck equation and the Boltzmann distribution in the electroosmotic flow with Joule heating has been discussed. The results of the time and spatial development for both the electroosmotic flow field and the Joule heating induced temperature field are presented. It is found that the presence of the Joule heating can result in significantly different electroosmotic flow and mass species transport characteristics.

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Because of Moore's (scaling/integration) law, the Cu/lowk silicon chip is getting bigger, the pin-out is getting higher, and the pitch is getting finer. Thus, the conventional organic buildup substrates cannot support these kinds of silicon chips anymore. To address these needs, Si interposer with TSV has emerged as a good solution to provide high wiring density interconnection, to minimize CTE mismatch to the Cu/low-k chip that is vulnerable to thermal-mechanical stress, and to improve electrical performance due to shorter interconnection from the chip to the substrate. This paper presents the development of TSV interposer technology for a 21x21 mm Cu/low-k test chip on FCBGA package. The Cu/low-k chip is a 65 nm, 9-metal layer chip with 150 μm SnAg bump pitch of total 11,000 I/O, with via chain and daisy chain for interconnect integrity monitoring and reliability testing. The TSV interposer size is 25x25x0.3 mm with CuNiAu as UBM on the top side, and SnAgCu bumps on the underside. The conventional BT substrate size is 45x45 mm with BGA pad pitch of 1 mm and core thickness of 0.8 mm. Mechanical and thermal modeling and simulation for the FCBGA package with TSV interposer have been performed. TSV interposer fabrication processes and assembly process of the large die mounted on TSV interposer with Pb-free micro solder bumps and underfill have been set up. The FCBGA samples have been subjected to moisture sensitivity test and thermal cycling (TC) reliability assessments.978-1-4244-4476-2/09/$25.00 ©2009 IEEE