1999
DOI: 10.1016/s0026-2692(98)00098-6
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Development of high frequency coreless transformer using thick film polymer technology

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Cited by 10 publications
(7 citation statements)
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“…An advantage of multilayer over coplanar devices is that they can reach higher L-values, up to 500 µH [31]. The performances of multilayer and coplanar microtransformers are comparable, with coupling coefficients higher than 70%, according to the articles that reported this parameter for multilayer devices [24], [26], [28], [32]- [38]. The quality factors of multilayer microtransformers can be higher than 10, as stated by some authors [39]- [41].…”
Section: Multilayermentioning
confidence: 92%
See 1 more Smart Citation
“…An advantage of multilayer over coplanar devices is that they can reach higher L-values, up to 500 µH [31]. The performances of multilayer and coplanar microtransformers are comparable, with coupling coefficients higher than 70%, according to the articles that reported this parameter for multilayer devices [24], [26], [28], [32]- [38]. The quality factors of multilayer microtransformers can be higher than 10, as stated by some authors [39]- [41].…”
Section: Multilayermentioning
confidence: 92%
“…Publications reporting the development of microtransformers for communications are about 34% of the works analyzed [6], [16]- [19], [21], [23], [28], [32], [34]- [39], [48], [49], [51], [52], [55], [60], [61], [63], [68], [74], [75], [82], [83], [95], [103], [107], [110], [121]- [123], [136]. This includes applications like UHF and VHF circuits and microwave monolithic integrated circuits.…”
Section: B Communicationsmentioning
confidence: 99%
“…Several on-chip micro-transformers have been fabricated on high resistive substrate or low-K dielectric films (Arshak and AlMukhtar, 1999;Wu et al, 2000;Yunas et al, 2009). The aim was to reduce the eddy currents in the substrate for a higher quality factor of the transformer.…”
Section: Introductionmentioning
confidence: 99%
“…Several techniques for fabricating planar transformer using standard CMOS RF IC technology have been developed, including using highly resistive substrate or thick low-K dielectrics film (Arshak 1999;Dalmia et al 2002;Wu et al 2000;Yoon et al 1999). In term of micromachining techniques, metal ground shield (Jiang et al 2002), thick metal traces (Yue and Wong 1998), thick oxide and suspended coil spiral over silicon trench (Ribas et al 2000;Jiang et al 2000) and out of plane coil structure (Jolic et al 2003) have been used to reduce the parasitic effects.…”
Section: Introductionmentioning
confidence: 99%