Development of GaN HEMT based High Power Active Integrated Antenna

Kumari, Rakhi; Basu, Ananjan; Koul, Shiban K.

doi:10.1109/imarc.2018.8877316

Cited by 4 publications

(3 citation statements)

References 5 publications

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“…This approach is, however, not well suited for higher frequencies, due to the increasing power losses of matching circuits and harmonic filters introduced between the PAs and antennas. To overcome this problem, direct impedance matching between the PA and radiating element can be used, as was demonstrated in [7], [8] for PCB-based designs and [9] for the antenna-in-package architecture. Monolithic microwave integrated circuits (MMICs) is a popular alternative, offering compact design and high repeatability (see [10], [11]).…”

Section: Introductionmentioning

confidence: 99%

Co-Design and Validation Approach for Beam-Steerable Phased Arrays of Active Antenna Elements With Integrated Power Amplifiers

Vilenskiy

Liao

Maaskant

et al. 2021

IEEE Trans. Antennas Propagat.

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An approach for designing a beam-steering active phased array of antenna elements with integrated power amplifiers (PAs) is presented. It is based on an amplifying active integrated unit cell (AiUC) concept, where the AiUC comprises a radiating slot element, a GaN high electron mobility transistor (HEMT), its input matching and DC biasing/feeding circuitry. The HEMT is embedded in the antenna element, being directly impedance-matched to HEMT's drain output, i.e. without using any intermediate and potentially lossy impedance matching network. The proposed co-design approach involves a full-wave analysis of the AiUC passive part (naturally including elements mutual coupling effects) along with the subsequent fullsystem harmonic balance simulations. Furthermore, we extend the standard definition of the scan element pattern (SEP) to the active scan element pattern (ASEP) that accounts for nonlinear effects of PAs on AiUC performance. We show that the ASEP is, in general, power-dependent and has a different shape as compared to the SEP. The proposed approach has been demonstrated for a K-band AiUC design example. It was verified through an active waveguide simulator, which is equivalent to the 23.7 • H-plane beam-steering case. Measurements are in good agreement with simulations, revealing AiUC 47% peak drain efficiency and 33 dBm maximum radiated power. The predicted scan range is ±60 • and ±37 • in the E-and H-plane, respectively.

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Section: Introductionmentioning

confidence: 99%

Co-Design and Validation Approach for Beam-Steerable Phased Arrays of Active Antenna Elements With Integrated Power Amplifiers

Vilenskiy

Liao

Maaskant

et al. 2021

IEEE Trans. Antennas Propagat.

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“…Power handling of solid state device decreases with increase in frequency. GaN/AlGaN HEMT has high power handling capability due to high breakdown voltage and high current density [2][3][4][5][6][7][8]. So, GaN/AlGaN HEMT is expected to generate high power.…”

Section: Introductionmentioning

confidence: 99%

“…Active circuit and antenna are connected directly. Direct integration of antenna and oscillating circuit leads to elimination of feed line and some part of the circuit which minimizes circuit size and loss [8][9][10][11][12][13][14]. At millimeter wave power can be increased to very high level using spatial power combining technique and AIA concept [15].…”

Section: Introductionmentioning

confidence: 99%

An Oscillator Type Active Integrated Antenna Using Gan/Algan Hemt With Maximum Power at Second Harmonic

Kumari¹,

Basu²,

Koul³

2020

PIER Letters

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In this paper an oscillator-type GaN HEMT based active integrated antenna is proposed where the active part of the circuit and patch antenna are in series. The patch antenna is designed to offer optimum impedance at second harmonic to generate maximum power at second harmonic and overall negative resistance at fundamental frequency for sustained oscillation. The circuit has been designed, fabricated, and characterized. The fundamental frequency of oscillation of this circuit is 1.5 GHz. This circuit has Effective Isotropic Radiated Power (EIRP) of 32.1 dBm at 3 GHz. Power at the fundamental frequency is suppressed due to mismatch of input impedance of patch antenna and deviation from optimum load required for maximum radiation at fundamental frequency. The power radiated at fundamental frequency is 15.7 dB lower than the power radiated at second harmonic. This design technique can be used for radiating useful high power much beyond the cutoff frequency of the transition of active device.

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GaN HEMT-based Wideband Power Amplifier Integrated Antenna

Chauhan,

Sipal

2023

2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)

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Development of GaN HEMT based High Power Active Integrated Antenna

Cited by 4 publications

References 5 publications

Co-Design and Validation Approach for Beam-Steerable Phased Arrays of Active Antenna Elements With Integrated Power Amplifiers

Co-Design and Validation Approach for Beam-Steerable Phased Arrays of Active Antenna Elements With Integrated Power Amplifiers

An Oscillator Type Active Integrated Antenna Using Gan/Algan Hemt With Maximum Power at Second Harmonic

GaN HEMT-based Wideband Power Amplifier Integrated Antenna

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