An Oscillator Type Active Integrated Antenna Using Gan/Algan Hemt With Maximum Power at Second Harmonic

Abstract

In this paper an oscillator-type GaN HEMT based active integrated antenna is proposed where the active part of the circuit and patch antenna are in series. The patch antenna is designed to offer optimum impedance at second harmonic to generate maximum power at second harmonic and overall negative resistance at fundamental frequency for sustained oscillation. The circuit has been designed, fabricated, and characterized. The fundamental frequency of oscillation of this circuit is 1.5 GHz. This circuit has Effective Isotropic Radiated Power (EIRP) of 32.1 dBm at 3 GHz. Power at the fundamental frequency is suppressed due to mismatch of input impedance of patch antenna and deviation from optimum load required for maximum radiation at fundamental frequency. The power radiated at fundamental frequency is 15.7 dB lower than the power radiated at second harmonic. This design technique can be used for radiating useful high power much beyond the cutoff frequency of the transition of active device.